Pseudomorphic InP HEMTs with dry-etched source vias having 190 mW output power and 40% PAE at V-band

Grundbacher, R.; Lai, R.; Nishimoto, M.; Chin, T. P.; Chen, Y.C.; Barsky, M.; Block, T.; Streit, D.C.

doi:10.1109/55.791928

Cited by 14 publications

(5 citation statements)

References 8 publications

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“…The performance enhancement observed on the carbon-doped GaN HEMTs was attributed to a better thermal dissipation. To verify this statement, we assessed the channel temperature of these devices using Raman thermography [31]- [35]. These measurements were carried out on same dimensions 2×50 µm DHFET and HEMT GaN/SiC devices.…”

Section: Raman Thermography Measurementmentioning

confidence: 99%

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Kabouche

Pecheux

Harrouche

et al. 2019

Int. J. Hi. Spe. Ele. Syst.

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In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance gm of 500 mS/mm, this structure shows excellent electrical characteristics. A maximum oscillation frequency fmax of 242 GHz has been observed. As a result, a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) of 52% up to VDS = 25V has been obtained. The achievement of such outstanding performance is attributed to the reduced thermal resistance (RTH) as compared to the commonly used double heterostructure by means of Raman thermography.

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Section: Raman Thermography Measurementmentioning

confidence: 99%

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Kabouche

Pecheux

Harrouche

et al. 2019

Int. J. Hi. Spe. Ele. Syst.

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“…4.4, the achieved PAE / POUT combination at 40 GHz compares favorably to the state-of-the-art. GaN HEMT, 40 GHz, NRL [14] GaN DHFET, 59 GHz, HRL [18] GaN HEMT, 40 GHz, ETH [15] GaAs pHEMT, 60 GHz, GE [19] GaN HEMT, 40 GHz, ETH [16] InP HEMT, 60 GHz, LM [20] GaN HEMT, 40 GHz, MiT [17] InP HEMT, 60 GHz, TRW [21] PAE (%)…”

Section: Large Signal Characterization At 40 Ghzmentioning

confidence: 99%

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

Kabouche

Derluyn²,

Püsche³

et al. 2018

2018 13th European Microwave Integrated Circuits Conference (EuMIC)

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We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers for millimeter-wave applications: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure field effect transistor (DHFET). It is observed that the carbon doped HEMT structure shows superior electrical characteristics, with a maximum drain current density Id of 1.5 A/mm, an extrinsic transconductance Gm of 500 mS/mm and a maximum oscillation frequency fmax of 242 GHz while using a gate length of 120 nm. The C-doped structure delivering high frequency performance together with an excellent electron confinement under high bias enabled to achieve a state-of-the-art combination at 40 GHz of output power density (POUT = 7 W/mm) and power added efficiency (PAE) above 52% up to VDS = 25V in pulsed mode. I.

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“…Silicon, bolstered by its maturity and cost-effective scale, has produced output powers up to 1 W in the sub-6 GHz regime with silicon lateraldiffusion metal-oxide-semiconductor (LDMOS) technology [1], but struggles at higher frequencies. Successful operation in the mm-wave frequency range has been achieved by gallium arsenide high-electron-mobility transistors (GaAs HEMTs) [2,3], silicon germanium heterojunction bipolar transistors (SiGe HBTs) [4], and indium phosphide HBTs [5,6], albeit at relatively low power levels. To achieve high-power and mmwave operation simultaneously, focus has turned to gallium nitride (GaN) HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Next generation electronics on the ultrawide-bandgap aluminum nitride platform

Hickman

Chaudhuri

Bader

et al. 2021

Semicond. Sci. Technol.

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Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose the shift to the aluminum nitride (AlN) platform. AlN allows for smarter, highly-scaled heterostructure design that will improve the output power and thermal management of III-nitride amplifiers. Beyond improvements over the incumbent amplifier technology, AlN will allow for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with AlN. It is on this new AlN platform that nitride electronics may maximize their full high-power, high-speed potential for mm-wave communication and high-power logic applications.

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Pseudomorphic InP HEMTs with dry-etched source vias having 190 mW output power and 40% PAE at V-band

Cited by 14 publications

References 8 publications

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

Next generation electronics on the ultrawide-bandgap aluminum nitride platform

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