2006
DOI: 10.1109/ted.2005.881006
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PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation

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Cited by 349 publications
(164 citation statements)
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References 63 publications
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“…PSP is the most accurate and physical MOSFET model available, 10 and so should be expected to provide good statistical-modeling capability while using as few parameters as possible. Conceptually, the process parameters can be broken into three groups: those that affect only PMOS devices, p p ; those that affect only NMOS devices, p n ; and those that are common and affect both types of devices, p c .…”
Section: Bpv Modeling Including Circuit Performancementioning
confidence: 99%
“…PSP is the most accurate and physical MOSFET model available, 10 and so should be expected to provide good statistical-modeling capability while using as few parameters as possible. Conceptually, the process parameters can be broken into three groups: those that affect only PMOS devices, p p ; those that affect only NMOS devices, p n ; and those that are common and affect both types of devices, p c .…”
Section: Bpv Modeling Including Circuit Performancementioning
confidence: 99%
“…Newer device models often have complexity 4-5× that of the classic bsim3 model [10] (e.g. compare psp [11] and bsim3 models in Table IV). This further motivates the need to accelerate device model evaluation to avoid paying a large modeling cost for future sub- micron circuit netlists.…”
Section: A Structure Of Spice Model Evaluationmentioning
confidence: 99%
“…Additionally, as transistor devices shrink in feature-size, the complexity of the device models required to simulate them correctly grows over time. Newer device models often have complexity 3-5× that of the classic bsim3 model [2] (as shown in Table 2, the psp model [3] is 5× more complex than the bsim3 model).…”
Section: Model Evaluationmentioning
confidence: 99%