2011 18th IEEE International Conference on Electronics, Circuits, and Systems 2011
DOI: 10.1109/icecs.2011.6122255
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PSP based DCG-FGT transistor model including characterization procedure

Abstract: A new DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) transistor model for static and transient simulations is presented. The PSP MOS description is used as a basis for the formulation of the conduction channel behavior. The floating gate potential is implicitly computed with an added charge neutrality relation that ensures a good convergence. The model is running under electrical simulator (ELDO) and is characterized thanks to ICCAP software. It has been validated on an advanced STMicroelectronics techno… Show more

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Cited by 3 publications
(4 citation statements)
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“…This transistor offers two operating modes leading to new approach in circuit design. The design flow has been completed by the extraction of compact model of DCG-FGT which is based on the PSP formulation [10]. This model has been calibrated with dummy cell implemented on STMicroelectronics 90nm FLASH technology.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…This transistor offers two operating modes leading to new approach in circuit design. The design flow has been completed by the extraction of compact model of DCG-FGT which is based on the PSP formulation [10]. This model has been calibrated with dummy cell implemented on STMicroelectronics 90nm FLASH technology.…”
Section: Discussionmentioning
confidence: 99%
“…It has been validated on 90nm FLASH technology from STMicroelectronics. An accurate and scalable model is available in design framework [10]. The DCG-FGT transistor has been implemented on a FLASH technology to get a uniform tunnel oxide (removal of thick oxide).…”
Section: Dcg-fgt Electrical Modelingmentioning
confidence: 99%
“…The approach used to develop the DCG-FGT model [7] is based on the use of the charge neutrality approach coupled with a PSP formulation. The PSP is used to model the intrinsic transistor, which is connected, as illustrated Fig.3, between the drain, the bulk, the source and the floating gate nodes.…”
Section: Modelingmentioning
confidence: 99%
“…The approach used to develop the DCG-FGT model [7] is based on the use of the charge neutrality approach coupled with a PSP formulation. The PSP is used to model the intrinsic transistor, which is connected, as illustrated Fig.…”
Section: Introductionmentioning
confidence: 99%