Pt/Ti Thin Film Adhesion on SiN_x/Si Substrates

Abstract

The adhesion of Pt/Ti thin films on SiN x /Si substrates with respect to the substrate pretreatment and annealing ambient was investigated using the adhesive tape test, the peel test, and the scratch test. Pt/Ti thin films were deposited a DC magnetron sputtering system. The in situ Ar+ RF plasma treatment was more effective in enhancing adhesion between the Pt/Ti thin films and the SiN x /Si substrate than chemical cleaning. After annealing in an oxygen ambient, the adhesion of the Pt/Ti/SiN x /Si specimen was degraded. This adhesion degradation was attributed to the depletion of the Ti adhesion layer due to the formation of the rutile TiO2 phase.

Cross-Linking Dendrimers with Allyl Ether End-Groups Using the Ring-Closing Metathesis Reaction

“…The dendrimer cross-linking chemistry alone or in combination with coring can also be used to form a stable shell around metallic nanoparticles, to rigidify the binding sites in molecularly imprinted polymers, and to create organic nanotubes by a “molding” process . Most commonly, the cross-linking of dendrimers has involved the ring-closing metathesis (RCM) reaction of homoallyl ether end-groups. ,, There are a few notable exceptions wherein other types of alkenes are cross-linked via the RCM reaction ,, and entirely different cross-linking chemistries employed 1 …”

Investigation of Pt/Ti bilayer on SiNx/Si substrates for thermal sensor applications

“…Platinum is generally used because of its chemical stability in high temperature and its high temperature coefficient of resistance ͑TCR͒. [1][2][3][4][5]10 In this study, Pt/Ti bilayer deposition by ac sputtering and electron beam evaporation techniques is reported for the substrate temperature range from room temperature to 400°C. [6][7][8][9] Therefore, Pt/Ti must have a good adhesion onto a SiN x /Si substrate to prevent the peeling layer in the KOH solution and it must have a high TCR to increase the sensor sensitivity.…”

Membrane microcantilever arrays fabrication with PZT thin films for nanorange movement

“…Generally PZT thin film with a large crystal size has better electrical property, so we prefer to anneal the film at a high temperature, like 750 or 800°C. However when the film is annealed at high temperature like 800°C, some bubbles could be observed on the bottom electrode and the electrode sometimes may even peel off from the substrate, which indicates that the adhesion of the Pt/Ti electrode layer to the substrate was degraded after the high temperature annealing in an oxygen atmosphere, the adhesion degradation is attributed to the depletion of the Ti adhesion layer due to the formation of the rutile TiO 2 phase (Kang et al 1999). In order to achieve a better ferroelectric property, the PZT thin film should be annealed at a much high temperature like 750 or 800°C, but considering the negative effects of the extreme high temperature annealing on the adhesion of bottom electrode to the substrate, one has to compromise and anneal the PZT thin film at a relatively high temperature like 650 or 700°C, instead of 750 or 800°C.…”