2014
DOI: 10.1016/j.ceramint.2014.01.001
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PTCR anomaly in barium-titanate-based composites

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Cited by 10 publications
(2 citation statements)
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“…This isolating phase is crucial and must exhibit, at a distinct temperature, an irregularity, i.e., a significant change in the temperature coefficient of expansion [5], a crystal transformation, and/or change in its crystal morphology [6]. Recently, a new type of PTCR composite based on the phenomenon known as the ''ferroelectric phase-transition-assisted anomaly in the electrical resistivity'' (FPTAA) was reported [7,8]. Here, the BaTiO 3 @Ni composite was considered in the context of the recently reported FPTAA phenomenon.…”
Section: Introductionmentioning
confidence: 99%
“…This isolating phase is crucial and must exhibit, at a distinct temperature, an irregularity, i.e., a significant change in the temperature coefficient of expansion [5], a crystal transformation, and/or change in its crystal morphology [6]. Recently, a new type of PTCR composite based on the phenomenon known as the ''ferroelectric phase-transition-assisted anomaly in the electrical resistivity'' (FPTAA) was reported [7,8]. Here, the BaTiO 3 @Ni composite was considered in the context of the recently reported FPTAA phenomenon.…”
Section: Introductionmentioning
confidence: 99%
“…At the Curie temperature, BaTiO 3 undergoes a ferroelectric-to-paraelectric transition. Polycrystalline n-type semiconducting barium titanate (BaTiO 3 ) exhibits a behavior known as the positive temperature coefficient of resistivity (PTCR) effect, although it has been also reported that single crystals exhibit a negative coefficient (NTCR), as shown infigure 16.a[92][93][94][95][96][97]. The resistance increase is predominantly associated with an increase in the grain-boundary barrier height, therefore it is important to gain information about the grain boundary character in these devices.Figures 16.b and 16.c present some additional features of such devices, respectively the multilayer structure and a flow sheet of its processing.Donor dopant incorporation is achieved by either electronic compensation at low concentration of dopants, or by vacancy compensation at high concentration.…”
mentioning
confidence: 99%