PtSi–n–Si Schottky-barrier photodetectors with stable spectral responsivity in the 120–250 nm spectral range

Abstract

Influence of grain boundary scattering in the infrared response of silicide Schottky barrier diodes Thermally induced transition metal contamination of silicide Schottky barriers on silicon AIP Conf.

A self-powered high-performance graphene/silicon ultraviolet photodetector with ultra-shallow junction: breaking the limit of silicon?

“…Semi-transparent metal/Si Schottky structures can only partially satisfy the requirement, as a large proportion of UV light is reflected or absorbed by metal layer without contributing to the photocurrent, resulting in low photo-responsivity. 28 Graphene (Gr), a single-layer of carbon sheet, exhibits excellent electronic conductivity [29][30][31] and optical transmittance [32][33][34] with great potential to replace metals as transparent electrodes. [35][36][37][38][39][40][41][42] Gr/Si structures have been studied in solar cells, 36,38,39 as well as, visible and INR photodetectors, 41,[43][44][45][46][47][48] showing excellent performances.…”

A quarter‐century of metrology using synchrotron radiation by PTB in Berlin

“…Further detector-based comparisons were recently performed against a dosimetric free-air ionisation Review Article chamber standard in the X-ray region [46] and against radiometric scales realised by other national metrology institutes in the UV, VUV, and EUV ranges via calibrated photodiodes. Based on the high-accuracy spectral responsivity scale, and by use of dispersed SR of high spectral purity, PTB has supported detector development for industrial and scientific applications [49][50][51][52]. Furthermore fundamental quantities were determined, such as the mean energy required for producing an electron-hole pair in silicon and gallium arsenide [53][54][55], the quantum efficiencies of gold and copper [56,57] and of caesium iodide photocathodes [58], the electron-impact ionisation and photoionisation cross sections of noble gases [59][60][61][62], and the cross sections for resonant Raman scattering on silicon [63].…”

Spectral Properties of Semiconductor Photodiodes

“…The difference between the two Si photodiodes, A and B, mainly originates from the difference in the oxide thickness; that of A is about 30 nm, which is much thinner than that of B. The PtSi photodiode was developed to realize better stability for the UV use by forming a Schottky barrier contact of PtSi to Si (Solt, K. et al, 1996). As this spectrum shows, special care should be paid to avoid stray light contribution because the detector is much more sensitive to the radiation having longer wavelength than the one in the region of interest (UV).…”