PtTe2: Potential new material for the growth of defect-free TeO2 single crystals

Mangin, J.; Veber, Philippe

doi:10.1016/j.jcrysgro.2008.02.036

Cited by 14 publications

(18 citation statements)

References 20 publications

(25 reference statements)

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“…Due to lower vapor pressure of PtO 2 and lower reaction activity of PtCl 2 , we selected elemental Pt as the reactant precursor and SiO 2 /Si as substrate, which is different from previous works of using powdered reactant as precursors to synthesize metallic TMDs on mica substrate . Based on phase diagram of Pt–Te system (see Figure S1 in the Supporting Information), we design a programing temperature of furnace as shown in Figure b and demonstrate the whole growth processes in Figure c. The principle of chemical reaction is based on the Pt–Te eutectic solidification.…”

Section: Resultsmentioning

confidence: 99%

“…Even worse, both CVT and CVD techniques require high‐temperature sublimation of precursors to synthesize the metallic TMDs with high melting‐point transition metal. From the viewpoint of thermodynamics, it is noteworthy that elements Pt and Te can form eutectic solution and yield PtTe x compounds with various stoichiometric ratio, dependent on reaction temperature and atomic ratio of precursors . Therefore, it is quite promising to develop a low‐temperature synthesis of stoichiometric and high‐quality thin PtTe 2 single crystals through the facile eutectic solidification, which can be used to uncover the weak antilocalization phenomenon in type‐II Dirac semimetals.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Hao

Zeng

et al. 2018

Adv Funct Materials

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Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase methods and requires high-temperature condition. As an alternative to the gas-phase synthetic approach, lower temperature eutectic liquid-phase synthesis presents a very promising approach with the potential for larger-scale and controllable growth of high-quality thin metallic TMD single crystals. Here, the first realization of low-temperature eutectic liquid-phase synthesis of type-II Dirac semimetal PtTe 2 single crystals with thickness ranging from 2 to 200 nm is presented. The electrical measurement of synthesized PtTe 2 reveals a record-high conductivity of as high as 3.3 × 10 6 S m −1 at room temperature. Besides, the weak antilocalization behavior is identified experimentally in the type-II Dirac semimetal PtTe 2 for the first time. Furthermore, a simple and general strategy is developed to obtain atomically thin PtTe 2 crystal by thinning as-synthesized bulk samples, which can still retain highly crystalline and exhibits excellent electrical conductivity. The results of controllable and scalable low-temperature eutectic liquid-phase synthesis and layer-by-layer thinning of high-quality thin PtTe 2 single crystals offer a simple and general approach for obtaining different thickness metallic TMDs with high meltingpoint transition metal.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Hao

Zeng

et al. 2018

Adv Funct Materials

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“…Most of the PtTe 2 at the interface remains intact due to its stability. [ 39 ] It is noted that some regions of the top layer are obscure, which might be related to air exposure during the transfer.…”

Section: Figurementioning

confidence: 99%

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

et al. 2020

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Spin-orbit torque (SOT) provides an ultrafast and energy-efficient means to switch magnetization, which is of fundamental and technical importance for spintronic devices. [1][2][3][4][5] A typical SOT device consists of heavy metal/ferromagnet (HM/FM) bilayer, where the HM (e.g., Pt, W, Ta, etc.) converts charge current into spin current mainly due to the spin Hall effect (SHE) and then exerts a torque on the adjacent FM enabling magnetization manipulation. To improve the energy efficiency of SOT-driven magnetization switching, considerable efforts have been made to enhance the charge-spin conversion efficiency of HM [6][7][8][9] and reduce the shunting current in the FM. [10,11] Engineering the bilayer structure [9,12] or replacing HM by novel materials with larger charge-spin conversion efficiency and higher conductivity [10,13,14] are possible avenues to realize higher SOT efficiency. Manipulation of magnetization by electric-current-induced spin-orbit torque (SOT) is of great importance for spintronic applications because of its merits in energy-efficient and high-speed operation. An ideal material for SOT applications should possess high charge-spin conversion efficiency and high electrical conductivity. Recently, transition metal dichalcogenides (TMDs) emerge as intriguing platforms for SOT study because of their controllability in spin-orbit coupling, conductivity, and energy band topology. Although TMDs show great potentials in SOT applications, the present study is restricted to the mechanically exfoliated samples with small sizes and relatively low conductivities.Here, a manufacturable recipe is developed to fabricate large-area thin films of PtTe 2 , a type-II Dirac semimetal, to study their capability of generating SOT. Large SOT efficiency together with high conductivity results in a giant spin Hall conductivity of PtTe 2 thin films, which is the largest value among the presently reported TMDs. It is further demonstrated that the SOT from PtTe 2 layer can switch a perpendicularly magnetized CoTb layer efficiently. This work paves the way for employing PtTe 2 -like TMDs for wafer-scale spintronic device applications.

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“…As a result of this reaction, we get a volatilization of oxygen, thus an oxygen loss in the batch, and finally creation of oxygen vacancies in the glass with appearance of low coordinated tellurium or even "wrong" tellurium bonds (Te-Te) responsible for the yellow-orange coloration of the glass [14] ( One can note that in the case of tellurite single crystals fabrication where the synthesis is very long, from several days to one week, a reaction between tellurium and platinum can occur, leading to incorporation of impurities such as PtTe, PtTe 2 , Pt 2 Te 3 and Pt 3 Te 4 in the single crystal. This feature is interesting, since finally PtTe 2 could be a suitable material for tellurite single crystal fabrication [16]. In our case of tellurite glass synthesis, it is possible, under adequate conditions, to obtain a reduction of tellurium dioxide, allowing a reaction between tellurium and the platinum crucible.…”

Section: Thermal and Optical Properties Of The Tzn Glassmentioning

confidence: 98%

Supercontinuum generation in suspended core microstructured tellurite optical fibers

Savelii¹,

Jules²,

Gadret³

et al. 2011

SPIE Proceedings

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We present the fabrication of tellurite TeO 2 -ZnO-Na 2 O (TZN) microstructured optical fibers (MOFs) with a suspended core and the characterization of their optical properties. The fibers are designed to develop an infrared supercontinuum generation using a sub-nJ femtosecond pulsed laser at 1.56µm. By pumping a 20 cm long fiber we generate a supercontinuum (SC) spanning over 800 nm in the 1-2 µm wavelength range. For a MOF with a core size of 2.2 µm the zero dispersion wavelength (ZDW) is at 1.45 µm. The effective area of TZN MOF is 3.5 µm 2 and the nonlinear coefficient is calculated to be 437 W -1 km -1 .

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PtTe2: Potential new material for the growth of defect-free TeO2 single crystals

Cited by 14 publications

References 20 publications

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂

Supercontinuum generation in suspended core microstructured tellurite optical fibers

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PtTe2: Potential new material for the growth of defect-free TeO2 single crystals

Cited by 14 publications

References 20 publications

Low‐Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Low‐Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe2

Supercontinuum generation in suspended core microstructured tellurite optical fibers

Contact Info

Product

Resources

About

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

Low‐Temperature Eutectic Synthesis of PtTe₂ with Weak Antilocalization and Controlled Layer Thinning

High Spin Hall Conductivity in Large‐Area Type‐II Dirac Semimetal PtTe₂