Publisher Correction: Optical quantum technologies with hexagonal boron nitride single photon sources

Shaik, Akbar Basha Dhu-al-jalali-wal-ikram

doi:10.1038/s41598-021-95271-5

Cited by 5 publications

(3 citation statements)

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“…The atom/molecule-like optical properties of the deep level defects in hexagonal boron nitride (hBN) layers make them promising solid-state quantum emitters (QEs) for use in quantum sensing and quantum computing. − What gives QEs in hBN such a tremendous potential are the different advantages offered by the two-dimensional (2D) layered structure of the host material as compared to three-dimensional semiconductor hosts, such as different SiC polytypes − and diamond. − These advantages include a possibility of deterministic placement of defects in a 2D host and a greater ability to tune properties of the defects in 2D layers. The latter can be achieved via a number of means, such as chemical alterations (doping) of the layers, application of strain, and/or simple heterostructuring.…”

Section: Introductionmentioning

confidence: 99%

Substrate-Induced Modulation of Quantum Emitter Properties in 2D Hexagonal Boron Nitride: Implications for Defect-Based Single Photon Sources in 2D Layers

Narayanan

Dev

2023

ACS Appl. Nano Mater.

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Quantum emitters (QEs) based on deep-level defects in hexagonal boron nitride (hBN) layers are promising alternatives to other qubit-candidates in three-dimensional wide bandgap semiconductors. The two-dimensional (2D) form factor of hBN allows the possibility of near-deterministic placement of quantum emitters and an ease of property-tuning via different means, such as application of strain. However, the 2D nature of hBN also results in a unique set of challenges, including a sensitivity of the QEs to their environment that can influence their different properties, such as their emission frequencies and brightness. In particular, although observed experimentally, theoretical works thus far have ignored substrate-induced modulation of hBN's QE properties. As a result, to date, the magnitude of substrate effects and the underlying mechanism(s) involved in the modulation of QE properties remain unknown. In our density functional theory-based work, we use silicon dioxide as a prototype substrate to demonstrate that the substrate effects can indeed have a significant impact on ground-and excited-state properties of defects responsible for quantum emission. Our analysis shows large structural distortions at the defect sites due to substrate interactions, resulting in significant changes in quantum emission frequencies. These calculations reveal that accounting for substrate effects is critical to the successful use of hBN in quantum sensing and quantum computing.

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Section: Introductionmentioning

confidence: 99%

Substrate-Induced Modulation of Quantum Emitter Properties in 2D Hexagonal Boron Nitride: Implications for Defect-Based Single Photon Sources in 2D Layers

Narayanan

Dev

2023

ACS Appl. Nano Mater.

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“…Hexagonal boron nitride (h-BN) presents a unique combination of a wide-band gap semiconductor and a layered crystal structure. − These characteristics make it the ideal substrate for 2D materials, but they are also at the origin of very original optical properties . Indeed, while being an indirect band gap semiconductor, h-BN presents strong luminescence in the far ultraviolet (UV) region, which has been recently interpreted as due to significant exciton–phonon coupling effects. ,, Furthermore, point defects in h-BN may act as very bright and room-temperature-stable single-photon sources ranging from the visible to the far UV. − The optical response of 2D semiconductors can be easily affected by low energy deformations such as layer gliding, bending, or folding. For instance, excitonic emissions at wrinkles in transition-metal dichalcogenides are shifted up to tens of meV due to local changes in the electronic band gap associated to strain .…”

Section: Introductionmentioning

confidence: 99%

“…1,5,6 Furthermore, point defects in h-BN may act as very bright and room temperature stable single photon sources ranging from the visible to the far UV. [7][8][9][10] The optical response of 2D semiconductors can be easily affected by low energy deformations such as layer gliding, bending or folding. For instance, excitonic emissions at wrinkles in transition metal dichalcogenides are shifted up to tens of meV due to local changes in the electronic band gap associated to strain.…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure of Folded Hexagonal Boron Nitride

et al. 2022

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Folded regions are commonly encountered in a number of hexagonal boron nitride (h-BN)-based bulk and nanostructured materials. Two types of structural modifications occur in folded h-BN layers: local curvature at the folded edges and interlayer shear of the layers which changes the stacking of the overlapping flat regions. In this work, we discuss, via density functional theory simulations, the impact of these structural modifications on the ground-state electronic structure of the pristine monolayer. We show that depending on the fold orientation, the overlapping region might present different stacking configurations with subsequent variations of the fundamental band gap; further gap changes occur at the folded regions. The overall electronic structure of a BN folded monolayer can finally be described as a type II junction between two wide-gap semiconductors located at the curved and flat overlapping zones.

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Electrical tuning of quantum light emitters in hBN for free space and telecom optical bands

Dhu-al Shaik,

Palla,

Jenkins

2024

Sci Rep

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Quantum light emitters (also known as single photon emitters) are known to be the heart of quantum information technologies. Irrespective of possessing ideal single photon emitter properties, quantum emitters in 2-D hBN defect structures, exhibit constrained quantum light emission within the 300–700 nm range. However, this emission range cannot fully satisfy the needs of an efficient quantum communication applications such as quantum key distribution (QKD), which demands the quantum light emission in fiber optic telecom wavelength bands (from 1260 to 1625 nm) and the free space optical (FSO) (UV-C-solar blind band—100 to 280 nm) wavelength ranges. Hence, there is a necessity to tune the quantum light emission into these two bands. However, the most promising technique to tune the quantum light emitters in hBN here, is still a matter of debate and till date there is no experimental and theoretical assurances. Hence, this work will focus on one of the most promising simple techniques known as Stark electrical tuning of the quantum light emission of hBN defect structures (NBVN, VB, CB, CBVN, CBCN, CBCNCBCN complex, and VBO2). These hBN defects are designed and sandwiched as metal/graphene/hBN defect structure/graphene/metal heterostructure and electrically tuned towards FSO and fiber optic bands (tuning range from UV-C to O-band IR region) region, using constrained DFT computations. The external electric field predicted to yield an atomic bond angle tilt associated with this point defect structure creates out-of-plane dipole moments, enabling the tuning of quantum emission. This electrical tuning technique leads to a simple passive photonic component which enables easier compatibility with quantum circuits and it is found to be one of the perfect alternative solutions, which does not require much external hardware setup to implement as compared to earlier published strain induced tuning experiments.

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Publisher Correction: Optical quantum technologies with hexagonal boron nitride single photon sources

Cited by 5 publications

References 0 publications

Substrate-Induced Modulation of Quantum Emitter Properties in 2D Hexagonal Boron Nitride: Implications for Defect-Based Single Photon Sources in 2D Layers

Substrate-Induced Modulation of Quantum Emitter Properties in 2D Hexagonal Boron Nitride: Implications for Defect-Based Single Photon Sources in 2D Layers

Electronic Structure of Folded Hexagonal Boron Nitride

Electrical tuning of quantum light emitters in hBN for free space and telecom optical bands

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