Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

Iglesias, V.; Lanza, Mario; Zhang, K.; Bayerl, A.; Porti, M.; Nafría, M.; Aymerich, X.; Benstetter, Günther; Shen, Zebang; Bersuker, G.

doi:10.1063/1.3666227

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“…This causes an elevated leakage current induced by defect states within the bandgap. [ 27,45,46 ] Here, we demonstrate for a series of highly controlled oxygen deficient HfO 2 − x samples how the conductivity evolves with the respectively applied voltage on single, pristine grains. Thereby, the discrimination between conductive grain boundaries and conductive grain areas was possible using high resolution c‐AFM imaging, as shown in Figure 4.…”

Section: Resultsmentioning

confidence: 93%

Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO_x Thin Films

Schmidt,

Kaiser,

Vogel

et al. 2024

Adv Elect Materials

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HfO2 is one of the most common memristive materials and it is widely accepted that oxygen vacancies are prerequisite to reduce the forming voltage of the respective memristive devices. Here, a series of six oxygen engineered substoichiometric HfO2 − x thin films with varying oxygen deficiency is investigated by conductive atomic force microscopy (c‐AFM) and the switching process of substoichiometric films is observed on the nanoscale. X‐ray diffractometry (XRD) exhibits a phase transition from stoichiometric, monoclinic HfO2 toward oxygen deficient, rhombohedral HfO1.7. The conductance of HfO2 − x is increasing with increasing oxygen deficiency, which is consistent with the increasing prevalence of the highly conductive rhombohedral phase. Simultaneously, c‐AFM reveals significant local conductivity differences between grains and grain boundaries, regardless of the level of oxygen deficiency. Single grains of highly oxygen deficient samples are formed at significant lower voltages. The mean forming voltage is reduced from (7.0 ± 0.6) V for HfO2 to (1.9 ± 0.8) V for HfO1.7. Resistive switching on the nanoscale is established for single grains for the highest deficient thin film samples. The final resistance state is thereby dependent on the initial conductivity of the grains. These studies offer valuable insights into the switching behavior of memristive polycrystalline HfO2.

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Section: Resultsmentioning

confidence: 93%

Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO_x Thin Films

Schmidt,

Kaiser,

Vogel

et al. 2024

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

Cited by 1 publication

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Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO_x Thin Films

Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO_x Thin Films

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Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

Cited by 1 publication

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Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfOx Thin Films

Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfOx Thin Films

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Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO_x Thin Films

Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO_x Thin Films