Publisher's Note: Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic 
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 topological insulator [Phys. Rev. B 
<b>95</b>
, 195113 (2017)]

Shrestha, K.; Chou, Mitch M. C.; Graf, David; Yang, Hao; Lorenz, B.; Chu, C. W.

doi:10.1103/physrevb.95.239901

Cited by 16 publications

(37 citation statements)

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“…The coupling between the metallic bulk state and the two surface states gives α =0.5 [11,47]. Experimentally α=0.3-1.1 is observed in thin films depending on the coupling between bulk and surface states [12,14,48,49] and for single crystals α ≈3 has been reported for insulating Bi 2 Te 2 Se [15] with resistance of 1kΩ at 2 K while α ∼ 10 5 for bulk crystals with metallic transport [6,50]. Figure 4 shows the symmetrized low field magnetoconductance of S1 and S2 along with the least square fitting of HLN equation at different temperatures.…”

Section: Resultsmentioning

confidence: 99%

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Observation of multichannel quantum coherent transport and electron-electron interaction in Bi2Te3 single crystal

Lakhani

Kumar

2019

Applied Physics Letters

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The bulk of topological insulators is relatively unexplored due to excess contribution of conduction from native defects. Here we investigate the bulk conduction in a Bi2Te3 crystal having reduced defect induced conduction. Our results uncover the presence of three transport regimes which are dominated by thermal activation across bulk band gap, defect state charge conduction, and quantum coherent transport. The low temperature conductance and magnetoconductance reveal the presence of multichannel two dimensional quantum coherent transport in the bulk. The number of channels are of the order of quintuple layers, signifying each quintuple layer as a single transport channel. These transport channels exhibit two dimensional electron-electron interaction effect causing electron dephasing whereas the defect state bulk conduction exhibits three dimensional electron-electron interaction effect which vanishes on enhancement in defect induced charge carriers.

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Section: Resultsmentioning

confidence: 99%

“…L φ remains constant upto ∼20 K and decreases on further increasing the temperature due to enhancement in inelastic scattering. The temperature dependence of L φ can be explained with [6,14] 1…”

Section: Resultsmentioning

confidence: 99%

Observation of multichannel quantum coherent transport and electron-electron interaction in Bi2Te3 single crystal

Lakhani

Kumar

2019

Applied Physics Letters

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“…With the advance in topological insulator thin film quality we foresee that these findings will be relevant for many applications, as electric field gating can also populate bulk bands in films that are capped and intrinsically insulating in the bulk 13 . Very recently single crystal growers have modified the Bi 2 Te 3 growth by applying an additional 'defect cleaning' step, by which Te vacancies are also strongly reduced, providing very large bulk mobilities also in this case 48 .…”

Section: Discussionmentioning

confidence: 99%

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

Ngabonziza

Wang

Brinkman

2018

Phys. Rev. Materials

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An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two-dimensional in nature. arXiv:1801.07543v1 [cond-mat.mtrl-sci]

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“…Among these topological insulators, the chalcogenide Bi 2 Se 3 is most appealing because of simple gapless Dirac cone at the surface and the large topologically non‐trivial gap of 0.3 eV between the bulk bands . The massless Dirac fermions in two dimensional (2D) surface states of topological insulators exhibit interesting magnetotransport properties such as large linear magnetoresistance (MR), non‐trivial Berry phase in Shubnikov‐de Haas (SdH) oscillations, weak antilocalization (WAL), and Aharonov–Bohm oscillations . The linear MR in topological insulators is observed in thin films, nanoplates, nanoribbons of Bi 2 Se 3 , thin films, nanosheets, and in single crystals of Bi 2 Te 3 where the surface state contribution dominates the overall transport of the system.…”

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confidence: 99%

“…The linear MR is observed in a number of materials, such as, silver chalcogenides, single and multilayer graphene, topological insulators, Dirac and Wevyl semimetals having a quantum or classical origin. The linear MR in nanosheets of Bi 2 Te 3 and nanoribbons of Bi 2 Se 3 have been ascribed to Abrikosov theory of quantum linear MR proposed for zero gap materials with linear dispersion.…”

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confidence: 99%

Large Linear Magnetoresistance from Neutral Defects in Bi₂Se₃ Single Crystal

Kumar

Lakhani

2018

Physica Rapid Research Ltrs

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The presence of large linear magnetoresistance in a Bi 2 Se 3 single crystal is reported. The magnetoresistance has quadratic form at low fields which crosses over to linear dependence above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and inverse of carrier concentration while the crossover field scales with inverse of mobility. The magnetoresistance scaling shows that fluctuations in carrier mobility and carrier concentration cause the linear magnetoresistance. This analysis suggests that scattering of charge carriers from neutral crystalline defects is the main source of mobility fluctuation. Further, the carrier concentration exhibits a strong temperature dependence which is attributed to the thermal activation of charge carriers from defect states having activation energy %13 meV.The topological insulators are novel materials having spin polarized Dirac electrons at the conducting surface and an insulating bulk. [1,2] Among these topological insulators, the chalcogenide Bi 2 Se 3 is most appealing because of simple gapless Dirac cone at the surface and the large topologically non-trivial gap of 0.3 eV between the bulk bands. [3] The massless Dirac fermions in two dimensional (2D) surface states of topological insulators exhibit interesting magnetotransport properties such as large linear magnetoresistance (MR), [4][5][6][7][8][9][10][11][12] non-trivial Berry phase in Shubnikov-de Haas (SdH) oscillations, [4,10,13,14] weak antilocalization (WAL), [15,16] and Aharonov-Bohm oscillations. [17] The linear MR in topological insulators is observed in thin films, nanoplates, nanoribbons of Bi 2 Se 3 , [4][5][6][7] thin films, nanosheets, and in single crystals of Bi 2 Te 3 [8][9][10] where the surface state contribution dominates the overall transport of the system. MR of these materials is sensitive to chemical doping and gating. [18] The presence of large MR and understanding of its origin over a broad temperature range makes these materials interesting for applications in magnetic sensing and magnetoelectric devices.The linear MR is observed in a number of materials, such as, silver chalcogenides, [19] single and multilayer graphene, [20,21] topological insulators, [4][5][6][7][8][9][10][11][12] Dirac [22] and Wevyl semimetals [23] having a quantum or classical origin. The linear MR in nanosheets of Bi 2 Te 3[8] and nanoribbons of Bi 2 Se 3 [4] have been ascribed to Abrikosov theory of quantum linear MR proposed for zero gap materials with linear dispersion. However the linear MR in nanoplates of Bi 2 Se 3 , [5] thin films of Bi 2 Se 3[6] and Bi 2 Te 3 [9] have been attributed to mobility fluctuations due to inhomogeneities suggesting a classical origin. The nature of MR in Bi 2 Se 3 single crystals and its origin has not been investigated yet. The MR of Bi 2 Se 3 crystals reported in literature have a large variation (MR % 17%, [24] 15%, [25] and 3.4% [26] ). Therefore, it is important to explore the mechanism of MR in bulk crystals from the perspective of fundamental unders...

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Publisher's Note: Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator [Phys. Rev. B 95 , 195113 (2017)]

Cited by 16 publications

References 0 publications

Observation of multichannel quantum coherent transport and electron-electron interaction in Bi2Te3 single crystal

Observation of multichannel quantum coherent transport and electron-electron interaction in Bi2Te3 single crystal

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

Large Linear Magnetoresistance from Neutral Defects in Bi₂Se₃ Single Crystal

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Publisher's Note: Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator [Phys. Rev. B 95 , 195113 (2017)]

Cited by 16 publications

References 0 publications

Observation of multichannel quantum coherent transport and electron-electron interaction in Bi2Te3 single crystal

Observation of multichannel quantum coherent transport and electron-electron interaction in Bi2Te3 single crystal

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

Large Linear Magnetoresistance from Neutral Defects in Bi2Se3 Single Crystal

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Large Linear Magnetoresistance from Neutral Defects in Bi₂Se₃ Single Crystal