Publisher's Note: “Hall voltage reversal and structural phase transition in VO2 thin films” [Appl. Phys Lett. <b>116</b>, 082106 (2020)]

Feng, J. J.; Li, C. F.; Luo, Cong-Shan; Yang, Hui; Zhang, A. H.; Li, Q.; Guo, Min; Gao, Dong; Fan, Zhen; Chen, Deyang; Qin, Minghui; Zeng, Min; Gao, X. S.; Lin, Yuan; Lu, Xubing; Liu, J.–M.

doi:10.1063/5.0008023

Cited by 1 publication

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“…Usually, a hetero‐interface in an MTJ is inevitable and essential. [ 7–10 ] However, interface disorder in an MTJ is always detrimental to its performance, making it challenging to keep the disorder within a tolerable threshold, especially in MTJs made of 2D materials. Additionally, although a large number of 2D materials have been discovered, the number of magnetic 2D materials remains as yet relatively small.…”

Section: Introductionmentioning

confidence: 99%

A Device Model for Achieving Sizable and Tunable Tunneling Magnetoresistance Using Two‐Dimensional Materials InX (X = O, Se) without Hetero‐Interface

Meng,

Jiang,

Zheng

2023

Advcd Theory and Sims

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The two‐dimensional (2D) materials InX (X = O, Se), experimentally available thus far, can become a ferromagnetic half metal under hole doping, though the charge neutral states of them are nonmagnetic semiconductors. Based on such an electronic characteristic, a theoretical model of magnetic tunnel junction (MTJ) is proposed composed only of one of the 2D InX. In doing so, the two semi‐infinite pieces of 2D InX in the half‐metallic state is assumed as the opposite electrodes which are separated by a strip of the same material but in its nonmagnetic state. Owing to the 2D nature of InX, the half metal electrodes of the InX device induced by hole doping can be achieved by using split gating technique. The numerical simulations identify a proper hole doping concentration, at which 100% tunneling magnetoresistance (TMR) ratios can be realized, accompanying an appreciable conductance of majority spin electron under parallel magnetization configuration. Under a finite bias voltage, the TMR ratio remains high. Therefore, the proposed device model is an ideal candidate for future spintronics applications. It enables electrical control of TMR and circumvents the detriment of hetero‐interface disorder inevitable in conventional MTJs.

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Section: Introductionmentioning

confidence: 99%