Publisher's Note: Predicted band structures of III-V semiconductors in the wurtzite phase [Phys. Rev. B<b>81</b>, 155210 (2010)]

De, Amrit; Pryor, Craig

doi:10.1103/physrevb.81.199901

Cited by 84 publications

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“…There are quite a few reports in the literature, where the electronic band structure of the WZ phase of InAs has been calculated. 19,20,21,22 In a recent article, 11 it was shown that the band gap related resonant Raman intensity of the TO mode of the InAs NW down-shifts by 110 meV from that of the corresponding bulk material due to the decrease in E 1 gap of the WZ phase of the former. In the inset to Fig.…”

Section: Iv(a) Internal Field Enhanced Raman Scatteringmentioning

confidence: 99%

Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires

Panda

Roy

Singha

et al. 2013

Solid State Communications

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An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E 1 ) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes.

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Section: Iv(a) Internal Field Enhanced Raman Scatteringmentioning

confidence: 99%

Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires

Panda

Roy

Singha

et al. 2013

Solid State Communications

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“…Some theories predict that GaP and AlP in the WZ structures have direct band gaps in contrast to the conventional zinc blende (ZB) structures with indirect band gaps. [5][6][7] Although this approach has been experimentally demonstrated in WZ GaP 8,9) and WZ AlInP, 10) these WZ materials with quantum well (QW) structures required for LED applications have not been reported so far.In nanowire (NW) structures, radial core-multishell (CMS) NWs with QW structures are suitable structures for LED applications. 11,12) In this study, we report the growth and characterization of WZ InP/AlGaP CMS NWs with QW structures for the green color spectrum.…”

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“…8,10) The estimated band gap for WZ Al 0.2 Ga 0.8 P is 2.394 eV using a linear approximation from the values found in the literature. 6,27) The WZ Al 0.5 Ga 0.5 P/Al 0.2 Ga 0.8 P/Al 0.5 Ga 0.5 P QW is predicted to be type I band alignment with the conduction and valence band offsets of 93 and 112 meV, and the quantum confinement effect of 3-nm-thick QW leads to an energy blue shift of 111 meV. In addition, the effect of indium incorporation of 10%, which was suggested by XRD and EDX measurements, leads to an energy red shift of 92 meV.…”

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confidence: 99%

“…The WZ AlGaP at an Al composition of around 20% is expected to have the band gap energy in the green spectral region according to calculations of their band structures. 6,7) The CMS NWs were synthesized by selective-area metal organic vapor phase epitaxy (SA-MOVPE). In SA-MOVPE, InP NWs can be grown with a pure WZ structure by properly adjusting the growth conditions.…”

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Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures

Ishizaka

Hiraya

Tomioka

et al. 2016

Jpn. J. Appl. Phys.

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We report on selective-area growth and characterization of wurtzite (WZ) InP/AlGaP core-multishell nanowires. Quantum well (QW) structures were fabricated in the AlGaP multishells by changing alloy compositions. Transmission electron microscopy revealed that the AlGaP multishell was grown with a WZ structure on side of the WZ InP core. The lattice constants of the WZ InP core and WZ AlGaP shell were determined by X-ray diffraction. Cathodoluminescence studies showed that the WZ AlGaP QW with an Al composition of 20% had green emissions at 2.37 eV. These results open the possibility for green light-emitting diodes using WZ AlGaP based materials. 2Color mixed RGB light-emitting diodes (LEDs) are promising candidates for future solidstate lightning and display technology due to their potential advantages in energy conversion efficiency and color rendering index (CRI). 1,2) However, achieving high efficient LEDs in the green region is challenging due to a lack of suitable semiconductor materials, which is known as the "green gap". 3,4) Non-nitride III-V materials having wurtzite (WZ) structures have recently offered a new approach to overcome this issue. Some theories predict that GaP and AlP in the WZ structures have direct band gaps in contrast to the conventional zinc blende (ZB) structures with indirect band gaps. [5][6][7] Although this approach has been experimentally demonstrated in WZ GaP 8,9) and WZ AlInP, 10) these WZ materials with quantum well (QW) structures required for LED applications have not been reported so far.In nanowire (NW) structures, radial core-multishell (CMS) NWs with QW structures are suitable structures for LED applications. 11,12) In this study, we report the growth and characterization of WZ InP/AlGaP CMS NWs with QW structures for the green color spectrum. The WZ AlGaP at an Al composition of around 20% is expected to have the band gap energy in the green spectral region according to calculations of their band structures. 6,7) The CMS NWs were synthesized by selective-area metal organic vapor phase epitaxy (SA-MOVPE). In SA-MOVPE, InP NWs can be grown with a pure WZ structure by properly adjusting the growth conditions. 13-15) Based on these WZ InP NWs, the crystal structure transfer method [16][17][18] was applied for the radial multishell growth. At first, a 20-nm-thick SiO 2 layer was deposited on an InP (111)A substrate using plasma sputtering, and the SiO 2 layer was partially removed using electron-beam (EB) lithography and wet chemical etching. The SiO 2 patterns were designed to be a periodic array of openings with a diameter of 130 nm.The SA-MOVPE was performed in a low-pressure MOVPE reactor using trimethylaluminum (TMAl), trimethylgallium (TMGa), trimethylindium (TMIn), and tertiarybutylphosphine 3 (TBP) as source materials. Prior to the growth, the native oxide on the openings was removed using thermal cleaning for 5 min at 600°C under a hydrogen and TBP ambient. After thermal cleaning, WZ InP NWs were grown for 15 min at 660°C with a V/III ratio of 18, which is t...

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Twinning in GaAs nanowires on patterned GaAs(111)B

Walther

Krysa

2014

Crystal Research and Technology

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We have studied twinning in GaAs nanowires grown via holes in a silica mask deposited on GaAs(111)B substrates by metal‐organic chemical vapour epitaxy without catalysts. Twins perpendicular to the growth direction form in the nanowires, their {111}‐type side facets leading to corrugation of their {110} side walls. The top facets are almost atomically smooth. Aberration corrected annular dark‐field scanning transmission electron microscopy reveals all twins are rotational, commencing with layers of Ga and finishing with As atoms. Energy‐loss spectroscopic profiling has shown no significant changes in the band‐gap or bulk plasmon energy at those twin boundaries, and the observed reduction of the interface plasmon energy by ∼0.13 eV is close to the detection limit of the technique, reflecting the very low energetic electronic changes related to twin formation.

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Publisher's Note: Predicted band structures of III-V semiconductors in the wurtzite phase [Phys. Rev. B81, 155210 (2010)]

Cited by 84 publications

References 0 publications

Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires

Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires

Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures

Twinning in GaAs nanowires on patterned GaAs(111)B

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