Pull-in-voltage and RF analysis of MEMS based high performance capacitive shunt switch

Pertin, Osor; Kurmendra,

doi:10.1016/j.mejo.2018.05.001

Cited by 31 publications

(15 citation statements)

References 15 publications

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“…The dimensions and material for substrate and coplanar waveguides are used for the impendence matching. In order to lower the pull in voltage overlapping area is to be increased [15]. By maximum power transfer, impedance matching is obtained with low return loss using RF MEMS switch.…”

Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Uniform Meander RF MEMS Switch

Mohan¹

2021

TURCOMAT

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This paper projected to uniform meander RF MEMS capacitive shunt switch design and analysis. The less pull in voltage is obtained in flexure type membrane by proposed RF MEMS Switch. The materials selection for the dielectric layer and beam is explained in this paper and also shown the performance depends on materials utilized for the design. The good isolation of -31dB is achieved for the pull-in voltage of 11.97V with a spring constant of 2.38N/m is produced by the switch and is obtained by the optimization process at a frequency of 38GHz.

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Section: Introductionmentioning

confidence: 99%

Design and Analysis of a Uniform Meander RF MEMS Switch

Mohan¹

2021

TURCOMAT

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“…In 2015, Persano et al estimated the pull-in voltage and the air gap between the bridge and the actuator of the GaAs-based double-clamped RF MEMS switch [ 22 ]. In 2018, Pertin et al studied the pull-in voltage and microwave characteristics of the double-clamped beam switch, which was modeled with optimal geometry for a low pull-in voltage [ 23 ]. Nevertheless, because of the simultaneous deformation of the beam and flexible substrate under bending conditions, the multi-physical modeling of the double-clamped beam RF MEMS switch based on flexible substrate is full of challenges.…”

Section: Introductionmentioning

confidence: 99%

Multi-Physical Models of Bending Characteristics on the Double-Clamped Beam Switch for Flexible Electronic Devices Application

Han

Chen

Qin

et al. 2020

Sensors

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In this paper, multi-physical models of bending characteristics, including the static, dynamic and microwave models, are firstly proposed for the double-clamped beam switch based on flexible substrate. Both simulated and experimental verification have been carried out to prove that the changing regularity of the driving voltage and time of the switch is inversely proportional with the increase in the bending curvature of the flexible substrate. The microwave performance of the switch at the ON state is found to get worse with the increase in the bending curvature. The measured results indicate that when the bending curvature increases from 0 m−1 to 28.6 m−1, the measured driving voltage decreases from 90.0 V to 72.6 V with the error of 5.9% compared with the calculated results. The measured driving time decreases from 52.4 μs to 35.6 μs with the error of 16.7% compared with the calculated results. When the substrate bending curvature increases from 0 m−1 to 28.6 m−1, the measured reflection loss S11 of the switch gradually deteriorates from −27.1 dB to −22.0 dB with the error of 1.3 dB corresponding to the calculated results at 10 GHz. All the simulated and experimental results are consistent with the theoretical calculated results.

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“…Firstly, the structure presented in this paper was optimized in terms of different size dimensions as well as the selection of materials involved a rigorous literature review and were so chosen that the disadvantages associated with previously designed switches could be overcome [17][18]. After designing the switch, we have done many static analysis such as pull in voltage analysis and RF analysis which have already been published in a journal of repute [21]. We found that the designed switch is showing a great improvement in terms of insertion, isolation and return loss parameters [21] Here, An analysis of the MEMS switch considering switching time is presented in terms of dielectric constant, voltages, air gap and width of the beam material.…”

Section: Introductionmentioning

confidence: 99%

“…After designing the switch, we have done many static analysis such as pull in voltage analysis and RF analysis which have already been published in a journal of repute [21]. We found that the designed switch is showing a great improvement in terms of insertion, isolation and return loss parameters [21] Here, An analysis of the MEMS switch considering switching time is presented in terms of dielectric constant, voltages, air gap and width of the beam material. In the proposed work we have taken most promising issue related to the MEMS switch that is switching time.…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of mems shunt capacitive switch for lower switching time

Kurmendra¹,

Kumar²

2019

3C Tecnología

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As Demand of High speed devices increasing for RF and satellite communications with better accuracy, MEMS technology is considerd to be emerging technology to fulfill that need. In this paper, A MEMS shunt capacitive switch with fixed-fixed beam have been designed and simulated for numerous parameters. The parameters for study are Selection of beam material for the switch, air gap distance between electrodes and importantly the actuation voltage. For studying the effect of air gap and beam width on switching time , the air gap was varied from 0.6 µm to 2.0 µm and beam width from 1 µm to 50 µm. For an actuatiuon voltage of 10.5 V and air gap distance of 0.6 µm, switching time result is 0.2 ns for spring constant equal to gold material.Study also considers the effect of increasing beam dimension in terms of width for a constant gap height. This syudy will be helpful for designing a MEMS capactitive switch for higher speed and for selection of proper dimension to get better performance.

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Pull-in-voltage and RF analysis of MEMS based high performance capacitive shunt switch

Cited by 31 publications

References 15 publications

Design and Analysis of a Uniform Meander RF MEMS Switch

Design and Analysis of a Uniform Meander RF MEMS Switch

Multi-Physical Models of Bending Characteristics on the Double-Clamped Beam Switch for Flexible Electronic Devices Application

Design and simulation of mems shunt capacitive switch for lower switching time

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