Pulse and pulse-reverse electroplating

Mandich, N. V.

doi:10.1016/s0026-0576(00)80346-3

Cited by 24 publications

(12 citation statements)

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“…For the high current density of 5.0 mA/cm 2 (Figs. 2(c), (f) and (i)), all surfaces of the wafer seemed to be "burning" [9]. If a high current density was applied onto a cathode, the hydrogen evolution reaction would occur on the cathode surface due to the high overpotential.…”

Section: Discussionmentioning

confidence: 99%

Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution

Jin

Lee

et al. 2015

Met. Mater. Int.

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A seed step-coverage enhancement process (SSEP) was investigated in order to improve the poor stepcoverage of the Cu seed layer when it is deposited by physical vapor deposition with a high-aspect-ratio through-silicon via (TSV) to inhibit void generation during a subsequent electroplating TSV gap-fill process. The SSEP was performed by means of electroplating after the deposition of the Cu seed layer in TSV using an alkaline pyrophosphate solution, which is effective when used to prevent the dissolution of the Cu seed layer. The molar ratio of pyrophosphate ions to Cu ions in the plating solution and the current density were optimized for the SSEP by considering the surface uniformity of the electroplated Cu film through electroplating on the defective seed layer. In order to improve the wettability of the pyrophosphate solution in the TSV pattern, polyethylene glycol p-(1,1,3,3-tetramethylbutyl)-phenyl ether was added to the solution. Finally, we significantly strengthened the seed step-coverage at the bottom-corner of the TSV, the weakest point in terms of seed step-coverage, and achieved a void-free filling of the TSV in the subsequent TSV gap-fill process.

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Section: Discussionmentioning

confidence: 99%

Seed step-coverage enhancement process for a high-aspect-ratio through-silicon via using a pyrophosphate solution

Jin

Lee

et al. 2015

Met. Mater. Int.

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show abstract

“…Also the cathodic pulse length was rather higher than usually done, even if there is no general rule indicating the best value of pulse length. The only significant parameter is the duty cycle, t on /(t on + t off ), in this case equal to 9.1%, and therefore very far from a DC polarization [42].…”

Section: Depositions Under Pulsed Potentialmentioning

confidence: 95%

Influence of the electrical parameters on the fabrication of copper nanowires into anodic alumina templates

Inguanta

Piazza

Sunseri

2009

Applied Surface Science

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“…Tests were carried out to investigate the influence of the polarisation [16][17][18]. Two types of polarisations were studied: (DC) direct current polarisation (J = 40 A dm −2 ) and (RPC) reversal pulsed current polarisation ( Table 1).…”

Section: Sample Preparationmentioning

confidence: 99%