1989
DOI: 10.1002/pssa.2211120237
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Pulse Ion Beam Doping and Modification of Solids

Abstract: A review is given of the most essential results on pulse implantation doping (PID) of semiconductors and plasma pulse treatment of metals. Estimations of parameters of ion pulses suitable for PID in metals are presented.

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Cited by 5 publications
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“…Irradiation of solids with so-called plasma-ion beams is a strongly nonequilibrium process, which enables a number of effects that are impossible to achieve with other methods [2]. These include improvement of wettability of ceramics [3][4][5], production of stable copper-ceramics interfaces [6], production of stable Ni-Cu and Al-Cu interfaces [7], improvement of properties of zirconium alloys [8], improvement of tribological properties of stainless steel [9], improvement of high temperature oxidation resistance of stainless steel [10], modification of superconducting and electrical properties of Mg-B structures [11], improvement of manganese distribution in Si with He + and H + plasma pulse irradiation [12], doping metals with nitrogen [13], and photovoltaic junction formation [14].…”
Section: Introductionmentioning
confidence: 99%
“…Irradiation of solids with so-called plasma-ion beams is a strongly nonequilibrium process, which enables a number of effects that are impossible to achieve with other methods [2]. These include improvement of wettability of ceramics [3][4][5], production of stable copper-ceramics interfaces [6], production of stable Ni-Cu and Al-Cu interfaces [7], improvement of properties of zirconium alloys [8], improvement of tribological properties of stainless steel [9], improvement of high temperature oxidation resistance of stainless steel [10], modification of superconducting and electrical properties of Mg-B structures [11], improvement of manganese distribution in Si with He + and H + plasma pulse irradiation [12], doping metals with nitrogen [13], and photovoltaic junction formation [14].…”
Section: Introductionmentioning
confidence: 99%