Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors

Noh, Joo Hyon; Joshi, P. C.; Kuruganti, Teja; Rack, Philip D.

doi:10.1109/jeds.2014.2376411

Cited by 9 publications

(3 citation statements)

References 28 publications

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“…To date, however, the distinct electronic states of the underlying material have not been correlated with the changes in the EDL structure of the interfacial IL. The amorphous indium gallium zinc oxide thin film transistor is an n-channel device where accumulation of charge carriers occurs in the oxide upon application of a positive gate voltage, and it forms an ideal platform to characterize and correlate the device characteristics and the IL structure because its turn-on characteristics have been well-characterized. , Understanding the interplay between the EDL structure and the transistor behavior of the oxide channel is thus crucial for our comprehension of the charge carrier enhancement at the interface and how it affects the conductivity of the oxide film.…”

Section: Introductionmentioning

confidence: 99%

Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

Black¹,

Come²,

et al. 2017

ACS Appl. Mater. Interfaces

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Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

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Section: Introductionmentioning

confidence: 99%

Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

Black¹,

Come²,

et al. 2017

ACS Appl. Mater. Interfaces

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“…The application of FLA on sputtered IGZO layers deposited on Si/SiO 2 substrates was first proposed by Noh et al ( Figure a) . As compared to TFTs prepared by conventional TA at 250 °C for 1 h in air ( μ = 6.7 cm 2 Vs −1 ), FLA treated TFTs exhibited higher electron mobility of 7.8 cm 2 V −1 s −1 .…”

Section: Flash Lamp Annealingmentioning

confidence: 96%

Section: Flash Lamp Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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