Pulsed CO₂ laser-induced gas plasma spectroscopy based on single beam splitting for trace metal analysis on a material surface

Trace metal analysis of element on material surface using pulse CO2 laser-induced breakdown spectroscopy applying vaporization technique

“…The weak line of Si 288.2 nm is most often because of experimental setup, which we proposed in this study, namely, by inclining the laser beam at inclining degree of 25 o coming onto the Si surface, which is attached by a metal mesh just on the Si surface. By using this technique, the ablation of the material sample can effectively be reduced due to shadow effect by a metal mesh as reported in our previous paper [ 43 ]. The existence of Si line verified that the Si material is still ablated by direct laser bombardment in the present method, thus resulting in material damaged.…”

“…The silicon wafers contain Cr at a various concentrations as a trace element on its surface. For example, to produce Cr film at a concentration of 1.25 mg/kg, the same procedure with the previous experiment [ 43 ] was conducted.…”

“…Expanding the TEA CO 2 LIBS technique, we further employed to trace elemental analysis of silicon [ 43 ]. However, the technique is still lack of sensitivity because the silicon material itself was ablated.…”

Performance of a surface corona preionized mini-TEA CO2 laser

“…Transversely excited atmospheric (TEA) CO 2 lasers are widely used in various scientific and practical applications, such as laser-induced breakdown spectroscopy [1][2][3][4], laserbased particle acceleration [5,6], synthesis of nanoparticles [7], laser ultrasonic testing of composite materials in the aerospace industry [8,9], laser-assisted surface machining and cleaning [10,11], etc. For some of these applications, a compact, reliable and cost-effective laser operating at a high repetition rate is required.…”