Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices

Jithin, M.; Ganapathi, K.; Vikram, G N V R; Udayashankar, N.K.; Mohan, S.

doi:10.1016/j.sna.2017.12.066

Cited by 23 publications

(2 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The exceptional combination of thermal and chemical stability, which extends even to temperatures as high as 1400 °C, while concurrently exhibiting plasmonic activity, underscores TiN as an extraordinarily promising candidate for a number of applications, including photothermal-based plasmonic applications, solar absorbers, − photothermal medical therapy, , and heat-assisted magnetic recording (HAMR) to name a few . As such, studies have been undertaken to improve the optical properties of TiN to shift plasmonic quality even closer to that of gold. − …”

Section: Introductionmentioning

confidence: 99%

Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy

Lipinski,

Lambert,

Maity

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Titanium nitride (TiN) has emerged as a highly promising alternative to traditional plasmonic materials. This study focuses on the inclusion of a Cr 90 Ru 10 buffer layer between the substrate and thin TiN film, which enables the use of cost-effective, amorphous technical substrates while preserving high film quality. We report best-in-class TiN thin films fabricated on fused silica wafers, achieving a maximum plasmonic figure of merit, −ϵ′/ϵ″, of approximately 2.8, even at a modest wafer temperature of around 300 °C. Furthermore, we delve into the characterization of TiN thin film quality and fabricated TiN triangular nanostructures, employing attenuated total reflectance and cathodoluminescence techniques to highlight their potential applications in surface plasmonics.

show abstract

Section: Introductionmentioning

confidence: 99%

Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy

Lipinski,

Lambert,

Maity

et al. 2023

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Recently, TiN has received attention as an electrode for use in rechargeable batteries [2][3][4]. TiN can be deposited in various ways, including direct current (DC) sputtering [5,6], atomic layer deposition [1], pulsed laser deposition [7], and plasma spraying [8]. For industry applications, DC sputtering is a good method due to its low cost.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-Assisted Sputtering Growth of TiN on Ceramic Substrates

Choi

Jeon

Kang³

et al. 2019

Coatings

View full text Add to dashboard Cite

Titanium nitride (TiN) has mechanical and electrical characteristics applicable for very large scale integration (VLSI) and discrete electronic devices. This study assessed the effect of hydrogen on sputtering growth of TiN on ceramic substrates. Although ceramic substrate is used in discrete device applications due to its insulating property, ceramic is also porous and contains oxygen and water vapor gases, which can be incorporated into TiN films during growth. In addition, discrete devices are usually packaged in glass sealing at 700 °C, and reaction with the trapped gases can significantly degrade the quality of the TiN film. In order to evaluate ways to minimize the effects of these gases on TiN, hydrogen gas was introduced during sputtering growth. The main hypothesis was that the hydrogen gas would react with oxygen to lower the oxygen density in the vacuum chamber, which would suppress the effects of the trapped gases in the ceramic and ultimately improve the quality of the TiN film. Improvements in TiN quality were confirmed by X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), and resistance measurements. During the glass-sealing process, N2-purging at 400 °C was effective at keeping the TiN in a low resistance state. These results show that introducing hydrogen gas during sputtering growth could solve the problems caused by ceramic substrates.

show abstract

Detection of Glioma‐Derived Exosomes with the Biotinylated Antibody‐Functionalized Titanium Nitride Plasmonic Biosensor

Qiu

Thakur

et al. 2018

Adv Funct Materials

View full text Add to dashboard Cite

Titanium nitride (TiN), as an excellent alternative plasmonic supporting material compared to gold and silver, exhibits tunable plasmonic properties in the visible and near-infrared spectra. However, label-free surface plasmon resonance biosensing with TiN is seldom reported due to lack of proper surface functionalization protocols. Herein, this study reports biotinylated antibody-functionalized TiN (BAF-TiN) for high-performance label-free biosensing applications. The BAF-TiN biosensor can quantitatively detect exosomes of 30-200 nm extracellular vesicles, isolated from a human glioma cell line. The limit of detection for an exosomal membrane protein with the BAF-TiN biosensor is found to be 4.29 × 10 −3 µg mL −1 for CD63, an exosome marker, and 2.75 × 10 −3 µg mL −1 for epidermal growth factor receptor variant-III, a glioma specific mutant protein, respectively. In conclusion, combining the biocompatibility, high stability, and excellent label-free sensing performance of TiN, the BAF-TiN biosensor could have great potential for the detection of cancer biomarkers, including exosomal surface proteins.

show abstract

Pulsed DC magnetron sputtered titanium nitride thin films for localized heating applications in MEMS devices

Cited by 23 publications

References 37 publications

Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy

Synthesis of Plasmonically Active Titanium Nitride Using a Metallic Alloy Buffer Layer Strategy

Hydrogen-Assisted Sputtering Growth of TiN on Ceramic Substrates

Detection of Glioma‐Derived Exosomes with the Biotinylated Antibody‐Functionalized Titanium Nitride Plasmonic Biosensor

Contact Info

Product

Resources

About