Pulsed DC Sputtering of Highly <i>c</i>‐Axis AlN Film on Top of Si (111) Substrate

Iqbal, Adeel; Walker, Gregg B.; Hold, Leonie; Fernandes, Alanna; Iacopi, Alan; Mohd-Yasin, F.

doi:10.1002/pssb.202000549

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…At low sputtering power, the low kinetic energy of Al adatoms leads to the appearance of many grain boundaries in the film, which easily induce tensile stress into the film. [27,28] Furthermore, defects such as interstitial atoms, Al or N vacancies in the film are easy to introduce compressive stress. And the bombardment of the film by energetic species can enhance the incorporation of atoms and form a close-packed AlN film with fewer defects, thus releasing the compressive stress in the film.…”

Section: Resultsmentioning

confidence: 99%

Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates

Yin

Han

Xing

et al. 2022

Crystal Research and Technology

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Aluminum nitride (AlN) films are prepared on Si (100) substrates by pulsed direct current magnetron sputtering. The effect of sputtering power on the crystal quality, residual stress, surface morphology, and optical properties of AlN films is comprehensively studied using X‐ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), atomic force microscope, and ellipsometer. It is found that the AlN film quality is strongly impacted by the sputtering power. When the sputtering power increases to 3 kW, the full width at half maximum of the AlN (002) rocking curve decreases to 2.66°. And the film crystal quality does not change significantly when the sputtering power exceeds 3 kW. Fourier transform infrared spectrum analysis shows that with increasing sputtering power, the compressive stress of AlN films first increases and then decreases. The high sputtering power also results in smoother surface and better optical performance for the AlN films. This work can serve as an important reference for growing high‐quality AlN films on cost‐effective silicon (Si) substrates via sputtering, which can facilitate the development and commercialization of III‐nitride based photonics and electronics on AlN‐on‐Si substrates.

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Section: Resultsmentioning

confidence: 99%

Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates

Yin

Han

Xing

et al. 2022

Crystal Research and Technology

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“…the N 2 concentration, ambient-pressure, substrate temperature and sputtering power are all important for various properties of AlN layer, e.g. residual stress, crystallinity, and morphology [11,[17][18][19][20][21][22]. After the sputtering, the post-annealing operation also works according to previous reports [23,24].…”

Section: Introductionmentioning

confidence: 97%

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Luo,

Yuan,

Liang

et al. 2024

Semicond. Sci. Technol.

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Preparing high-quality AlN films at low temperatures is always highly demanded in plenty of application-fields, despite the high temperature is always necessary to enable the AlN crystallization. Therefore, improving the structural properties at low temperature is still challenging in the field. In the present work, the metal organic chemical vapor deposition (MOCVD) grown AlN nucleation layer is employed to improve the crystallinity and morphology of sputtered AlN on 6-inch Si (111) substrate at the temperature even as low as 100℃ where it is not principally possible to achieve the crystallization of sputtered AlN. When compared with the as-sputtered AlN prepared even at 650℃, it is found that the full width at half maximum (FWHM) of AlN (002) X-ray rocking curves is intensively decreased to 0.96° from 1.61°, and such a reduction indicates that the screw dislocation density is decreased from 7.31×1010 down to 2.14×1010/cm2. In addition to the crystallinity, the morphology is also obviously improved that the root-mean-square (RMS) roughness is reduced from 4.99 nm down to 0.83 nm in a scanned area of 3×3 μm2 through introducing AlN nucleation. Therefore, such a combination highlights the contribution of AlN nucleation grown by MOCVD in improving the structural properties of low-temperature sputtered AlN layer which is compatible with the manufacturing of Si integrated circuits.

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Crystalline and optical properties of AlN films with varying thicknesses (0.4-10 µm) grown on sapphire by metalorganic chemical vapor deposition

et al. 2023

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Pulsed DC Sputtering of Highly c‐Axis AlN Film on Top of Si (111) Substrate

Cited by 4 publications

References 32 publications

Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates

Influence of Pulsed DC Sputtering Power on the Quality and Residual Stress of AlN Films on Si (100) Substrates

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Crystalline and optical properties of AlN films with varying thicknesses (0.4-10 µm) grown on sapphire by metalorganic chemical vapor deposition

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