Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy

Liu, C.; Shields, P. A.; Denchitcharoen, Somyod; Степанов, С. И.; Gott, A.; Wang, W.N.

doi:10.1016/j.jcrysgro.2006.11.033

Cited by 15 publications

(12 citation statements)

References 7 publications

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“…Thus, very thick GaN is required to flatten the overgrown layer. A possibility to minimize these gaps is to use pulsed overgrowth or ultra low V/III [8,9]. In additional tests, Si x N y was used as the mask material.…”

Section: Methodsmentioning

confidence: 99%

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Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

Cheng¹,

Motsnyi²,

Leys³

et al. 2008

Phys. Status Solidi (c)

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Epitaxial Lateral Overgrowth (ELOG) of GaN on 4 inch silicon(111) substrates by MOVPE was investigated in this study. ELOG was performed on a GaN template with a couple of AlGaN intermediate layers (IL) on an AlN nucleation layer. The AlGaN ILs supply compressive stress to the top GaN template and thereafter to the ELOG layer. Consequently, layer cracking is minimized. Two masks were used in this work: a 2 inch wagon wheel mask and a 4 inch mask with parallel stripes of various filling factors and periods. The filling factor is varied from 0.33 to 0.7. The periodic spacing is in the range of 6 μm to 10 μm. Temperature, V/III ratio, pressure and stripe orientation were optimized to achieve fastest lateral growth rate. The highest lateral to vertical ratio can be more than 4. A fully coalesced layer within the critical thickness for a crack‐free layer was achieved on 4 inch silicon substrates. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Methodsmentioning

confidence: 99%

“…However, the surface was clearly rougher when using a Si x N y mask as compared to SiO 2 . It has been reported in the literature that too fast lateral overgrowth may also lead to unstable surfaces [9].…”

Section: Methodsmentioning

confidence: 99%

Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

Cheng¹,

Motsnyi²,

Leys³

et al. 2008

Phys. Status Solidi (c)

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“…It provides an avenue for DUV-LEDs with improved performance. The method relies on the growth of nitrides on windows opened in a dielectric mask material such as SiO 2 or patterned substrate/template formed by etching followed by lateral extension and coalescence [73,74]. The defects can propagate to the upper layer only through the areas where there are windows, while the defect density is considerably reduced in the laterally grown area.…”

Section: Epitaxial Lateral Overgrowth Of Aln and High Al-molar Fractimentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

et al. 2017

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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“…The method relies on the growth of nitrides on windows opened in a dielectric mask material such as SiO2 or patterned substrate/template formed by etching followed by lateral extension and coalescence. [69,70] The defects can propagate to the upper layer only through the areas where the windows are, while the defect density is considerably reduced in the laterally grown area. Growth anisotropy in the form of different growth rates on different crystallographic planes plays a key role in this method.…”

Section: Epitaxial Lateral Overgrowth Of Aln and High Al-molar Fractimentioning

confidence: 99%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Pulsed epitaxial lateral overgrowth of GaN by metalorganic vapour phase epitaxy

Cited by 15 publications

References 7 publications

Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

Epitaxial lateral overgrowth of GaN on 4 inch Si(111) by MOVPE

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

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