Pulsed laser crystallization of silicon–germanium films

Sameshima, Toshiyuki; Watakabe, Hajime; Kanno, Hiroshi; Sadoh, Taizoh; Miyao, Masanobu

doi:10.1016/j.tsf.2005.01.037

Cited by 20 publications

(16 citation statements)

References 20 publications

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“…Substrates were then immediately loaded into the reactor, with no load-lock chamber, and pumped down to 10 −7 mbar within 30 min. Reactive species are created from dissociation of a mixture of GeH 4 and H 2 (respectively 5 and 200 sccm) under a RF power density 50 mW.cm −2 at a total pressure of 2.6 mbar, resulting in a deposition rate of about 5 Å.min −1 and thicknesses up to 168 nm. Amorphous hydrogenated silicon (a-Si:H) layers are deposited on top of epitaxial layers, from a silane plasma under a total pressure of 0.13 mbar and RF power density of 6 mW.cm −2 (deposition rate 0.5 Å.s −1 ).…”

Section: Experimental Methodsmentioning

confidence: 99%

“…The main ways to meet this target are crystallization of amorphous materials by novel techniques that allow to preserve the substrate [2][3][4][5] or deposition of epitaxial layers, eventually combined with lift off processes for transfer on a flexible support. Within this context, the growth of high quality Germanium with a smooth surface epi-layer on Si is a crucial step for III-V materials a Electronic mail: romain.cariou@polytechnique.edu.…”

Section: Introductionmentioning

confidence: 99%

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Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

et al. 2014

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International audienceWe report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 106 cm−2 are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

et al. 2014

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“…Rapid melt growth on sapphire substrates and ELC on glass substrates have been reported as techniques for the growth of SiGe thin films (Sameshima et al, 2005;Weizman et al, 2005;Koh et al, 2010;Tanaka et al, 2010) Strong lateral segregation reportedly caused the local Ge content to differ by as much as 40% from the average value (Weizman et al, 2005). Therefore, it is necessary to examine the segregation of Ge and the appropriate growth mode for alloys in order to form crystalline SiGe on glass substrates.…”

Section: Growth Of Quasi-single Crystalline Sige Thin Filmsmentioning

confidence: 99%

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Kitahara¹,

Hara²

2012

Crystallization - Science and Technology

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“…Transient conductance measurements are useful to observe rapid melting and solidification phenomena [13,14]. Figure 1a shows the transient electrical conductance per unit area when a pulsed XeCl excimer laser with a pulse width of 30 ns was irradiated to 50-nm-thick Si films formed on a quartz substrate [15]. A laser energy density higher than 200 mJ/cm 2 was necessary to observe a significant increase in the electrical conductivity because of the high melting point of silicon films.…”

Section: Laser-induced Heating Followed By Melting Of Silicon and Germentioning

confidence: 99%

Laser crystallization for large-area electronics

Sameshima

2009

Appl. Phys. A

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Laser crystallization is reviewed for the purpose of fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs). Laser-induced rapid heating is important for formation of crystalline films with a low thermal budget. Reduction of electrically active defects located at grain boundaries is essential for improving electrical properties of poly-Si films and achieving poly-Si TFTs with high performances. The internal film stress is attractive to increase the carrier mobility. Recent developments in laser crystallization methods with pulsed and continuous-wave lasers are also reviewed. Control of heat flow results in crystalline grain growth in the lateral direction, which is important for fabrication of large crystalline grains. We also report an annealing method using a high-power infrared semiconductor laser. High-power lasers will be attractive for rapid formation of crystalline films over a large area and activation of silicon with impurity atoms.

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Pulsed laser crystallization of silicon–germanium films

Cited by 20 publications

References 20 publications

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

Oriented Lateral Growth and Defects in Polycrystalline-Silicon Thin Films on Glass Substrates

Laser crystallization for large-area electronics

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