Pulsed Laser Deposited ZnO for Thin Film Transistor Applications

Abstract

The film growth conditions were optimized for pulsed laser deposited ZnO thin films for high performance field effect transistor applications. Transistors fabricated on Si and GaAs substrates with various gate lengths and gate widths and demonstrated current on/off ratios better than 1012, current density of >700mA/mm, sub-threshold gate voltage slope of 109mV/decade, current gain cutoff frequency of 500MHz, and power gain cutoff frequency of 400MHz (2um gate device).

Mechanical and structural characterization of atomic layer deposition-based ZnO films

“…Various forms of ZnO including single crystal, thin films, powder, and nanostructures such as nanotubes, nanosheets, needles, nanorods, shells, ribbons, and tetrapods can be synthesized by many different techniques. These techniques include sputtering [3], pulsed laser deposition (PLD) [4,5], electrochemical decomposition [6], thermal evaporation [7] vapor liquid phase, metal organic chemical vapor deposition [8], molecular beam epitaxy [9], and recently atomic layer deposition (ALD) [10,11]. Among the thin film growth techniques, ALD provides unique features such as precise control of film thickness with atomic resolution, high uniformity, good conformity, and high aspect ratio.…”

Physical Characterization of Zinc Oxide Thin Films Grown by ALD

“…The loaddisplacement curve is shown in Fig. (5). A pop-out can be seen from the unloading part of the load-displacement curve.…”

“…Various forms of ZnO such as single crystal, thin films, powder, and nanostructures such as nanotubes, nanosheets, needles, nanorods, shells, ribbons, and tetrapods can be synthesized by many different techniques. These techniques include sputtering (3), pulsed laser deposition (4,5), electrochemical decomposition (6), thermal evaporation (7), vapor liquid phase (8), metal organic chemical vapor deposition (MOCVD) (9), molecular beam epitaxy (MBE) (10) and recently atomic layer deposition (ALD) (11,12). Among the thin film growth techniques, Atomic Layer Deposition (ALD) provides unique features such as precise control of ZnO thin films with atomic resolution.…”

Raman Spectroscopy of ZnO Thin Films by Atomic Layer Deposition

“…Various forms of ZnO such as single crystal, thin films, powder, and nanostructures such as nanotubes, nanosheets, needles, nanorods, shells, ribbons, and tetrapods can be synthesized by many different techniques. These techniques include sputtering (3), pulsed laser deposition (4,5), electrochemical decomposition (6), thermal evaporation (7), vapor liquid phase (8), metal organic chemical vapor deposition (MOCVD) (9), molecular beam epitaxy (MBE) (10), and recently atomic layer deposition (ALD) (11,12). Among the thin film growth techniques, ALD provides unique features such as precise control of the ZnO film thickness with atomic resolution, high uniformity, good conformity, and the ability to coat high aspect ratios.…”