Pulsed laser deposition and characterization of nitrogen-substituted SrTiO3 thin films

Marozau, Ivan; Shkabko, Andrey; Dinescu, Gheorghe; Döbeli, M.; Lippert, Thomas; Logvinovich, D.; Mallepell, M.; Schneider, Claudia; Weidenkaff, Anke; Wokaun, Alexander

doi:10.1016/j.apsusc.2008.07.159

Cited by 27 publications

(21 citation statements)

References 13 publications

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“…17, 19, and 24͔͒ and NH 3 is also likely to chemically affect the STO during its integration in MIM capacitors. [25][26][27][28] Regarding Ru precursors, considerable attention has been devoted to new compounds, which have an improved reactivity and volatility. 34 in the case of Pt.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Leick

Verkuijlen

Lamagna

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The metalorganic precursor cyclopentadienylethyl͑dicarbonyl͒ruthenium ͑CpRu͑CO͒ 2 Et͒ was used to develop an atomic layer deposition ͑ALD͒ process for ruthenium. O 2 gas and O 2 plasma were employed as reactants. For both processes, thermal and plasma-assisted ALD, a relatively high growth-per-cycle of ϳ1 Å was obtained. The Ru films were dense and polycrystalline, regardless of the reactant, yielding a resistivity of ϳ16 ⍀ cm. The O 2 plasma not only enhanced the Ru nucleation on the TiN substrates but also led to an increased roughness compared to thermal ALD.

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Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Leick

Verkuijlen

Lamagna

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The injected gas crosses the ablation plume close to its origin resulting in dissociation and activation of the gas pulse molecules via collisions with the high-energetic ablation plasma species. The utilization of oxygen-containing gases helps to overcome oxygen deficiencies in films [15], while the use of nitrogen (N 2 ) or ammonia (NH 3 ) allows the deposition of nitrogen-substituted films [14,17]. In this study, both nitridizing gases were used for the gas pulse and background gas.…”

Section: Methodsmentioning

confidence: 99%

Optical Properties of Nitrogen-Substituted Strontium Titanate Thin Films Prepared by Pulsed Laser Deposition

et al. 2009

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Perovskite-type N‑substituted SrTiO3 thin films with a preferential (001) orientation were grown by pulsed laser deposition on (001)-oriented MgO and LaAlO3 substrates. Application of N2 or ammonia using a synchronized reactive gas pulse produces SrTiO3-x:Nx films with a nitrogen content of up to 4.1 at.% if prepared with the NH3 gas pulse at a substrate temperature of 720 °C. Incorporating nitrogen in SrTiO3 results in an optical absorption at 370‑460 nm associated with localized N(2p) orbitals. The estimated energy of these levels is ≈2.7 eV below the conduction band. In addition, the optical absorption increases gradually with increasing nitrogen content.

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“…The purpose of the pulsed gas valve is to use a reactive gas when transfer and deposition of material occurs, but also to provide a higher partial pressure during the interactions, yet to maintain a defined and low background pressure. Another example is the controlled substitution of ions in a growing film like N-doped SrTiO 3 [8,9]. 5.1c).…”

Section: Pulsed Laser Ablationmentioning

confidence: 99%

“…Changing the background gas to other gases such as NH 3 to provide reactive nitrogen, the composition of a film can be substantially changed [8,9]. This high flux could change the film and substrate surface energies and will increase the oxygen content, like in oxide thin films.…”

Section: Nanosecond Laser Irradiationmentioning

confidence: 99%

Laser Ablation and Thin Film Deposition

Schneider

Lippert²

2010

Laser Processing of Materials

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One of the most versatile deposition techniques in solid-state physics and analytical chemistry is the vaporization of condensed matter using photons. A shortpulsed high-power laser beam is focused onto a sample surface thereby converting a finite volume of a solid instantaneously into its vapor phase constituents such as ions and neutrals. Subsequently, the vapor moves away from the target at a high velocity and can be sampled either to grow a film or being analyzed by various spectroscopic techniques. In this chapter, the focus is on general properties of pulsed laser ablation relevant for solid-state physics like the initial ablation processes, plume formation, and plume properties. Next, oxide thin film growth will be discussed and the growth of LaAlO 3 /SrTiO 3 heterostructures is presented as one example of tailoring oxide interfaces with surprising properties. The final discussion is on the topic of polymer ablation.

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Pulsed laser deposition and characterization of nitrogen-substituted SrTiO3 thin films

Cited by 27 publications

References 13 publications

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Optical Properties of Nitrogen-Substituted Strontium Titanate Thin Films Prepared by Pulsed Laser Deposition

Laser Ablation and Thin Film Deposition

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