2016
DOI: 10.1016/j.proeng.2016.11.341
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Pulsed Laser Deposition for Improved Metal-oxide Gas Sensing Layers

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Cited by 12 publications
(5 citation statements)
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“…The broad stretching vibration peak 3450 cm –1 is ascribed asymmetric ν(OH) stretching mode from water/metal hydroxyl in α-phase ν(Ni–OH). The sharp peak around 1620 cm –1 is ascribed to δ(OH) bending vibration 28 on the Ni surface. The aforementioned results confirm that Ni(OH) 2 was precipitated successfully.…”
Section: Resultsmentioning
confidence: 99%
“…The broad stretching vibration peak 3450 cm –1 is ascribed asymmetric ν(OH) stretching mode from water/metal hydroxyl in α-phase ν(Ni–OH). The sharp peak around 1620 cm –1 is ascribed to δ(OH) bending vibration 28 on the Ni surface. The aforementioned results confirm that Ni(OH) 2 was precipitated successfully.…”
Section: Resultsmentioning
confidence: 99%
“…Amongst all the phases of WO 3 , hexagonal ( h ‐WO 3 ) and monoclinic in the form of thick film (150–200 nm) are usually used as photocatalyst, [ 18 ] batteries, [ 19 ] and gas‐sensing elements. [ 20 ] While the exposed facet, such as triclinic (200), was found to be important for sensing applications, oxygen density as well as energy level positioning played an important role in achieving the desired performance in photocatalysts. Several physical and chemical routes such as pulsed laser, [ 20 ] spray pyrolysis, [ 21 ] sputtering, thermal/e‐beam evaporation, [ 22 ] chemical vapor deposition, spin‐coating, and sol–gel [ 23 ] have been adopted to prepare WO 3 thin films.…”
Section: Introductionmentioning
confidence: 99%
“…[ 20 ] While the exposed facet, such as triclinic (200), was found to be important for sensing applications, oxygen density as well as energy level positioning played an important role in achieving the desired performance in photocatalysts. Several physical and chemical routes such as pulsed laser, [ 20 ] spray pyrolysis, [ 21 ] sputtering, thermal/e‐beam evaporation, [ 22 ] chemical vapor deposition, spin‐coating, and sol–gel [ 23 ] have been adopted to prepare WO 3 thin films. However, crystalline WO 3 phases could only be prepared at substrate temperature >300 °C owing to insufficient energy available for the mobility of the condensed species and further crystallization could be obtained after post‐annealing.…”
Section: Introductionmentioning
confidence: 99%
“…One of the techniques to produce thin films of metal oxide semiconductors is physical vapor deposition (PVD), including thermal evaporation (EV), pulsed laser deposition (PLD), magnetron sputtering (MS), and ion beam sputter deposition (IBSD). These methods are Coatings 2022, 12, 1565 2 of 17 used to deposit high-quality thin films of metal oxide semiconductors for various applications, with a wide range of thicknesses, to combine the production of thin films with microelectronic technologies, and to modify the composition of, and control the properties of, films by varying the conditions of their deposition [19][20][21][22][23][24][25][26][27][28]. IBSD is distinguished by the highest energies of forming particles.…”
Section: Introductionmentioning
confidence: 99%