Pulsed laser deposition of

Sato, Kōichi; Takahashi, Masakazu; Matsunami, N.; Takai, Yoshiaki

doi:10.1088/0953-2048/9/4a/040

Cited by 6 publications

(1 citation statement)

References 2 publications

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“…The laser beam, shaped through a rectangular slit, was introduced at an incidence angle of 30 • relative to the target surface. The PLD apparatus used in this work was the same as that used in earlier work [14]. The laser fluence at the surface of the target was estimated to be 0.2-1.0 J cm −2 and the laser spot size was 2.7 × 1.2 mm 2 .…”

Section: Methodsmentioning

confidence: 99%

Low-temperature growth of by pulsed laser deposition

Takahashi

Takai

1998

Supercond. Sci. Technol.

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We prepared superconducting films at lower temperatures by a pulsed laser deposition method. The growth temperature usually decreased with decreasing oxygen pressure in the deposition chamber. However, the superconducting critical temperature of the films deposited at a low oxygen pressure was drastically degraded because of insufficient oxidation. In this work, we employed a mixed gas consisting of oxygen and ozone as the oxidation gas. As a result, increased to 86 K, when films were deposited in a low-pressure oxygen atmosphere (5 mTorr) mixed with ozone (5 mol%) and at a low laser fluence of . In addition to superconducting properties, the surface morphology could be improved by using low-pressure oxygen gas mixed with ozone and by optimizing the laser fluence.

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Section: Methodsmentioning

confidence: 99%

Low-temperature growth of by pulsed laser deposition

Takahashi

Takai

1998

Supercond. Sci. Technol.

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Electrical properties of BaTiO3 based ferroelectric capacitors grown on oxide sacrificial layers for micro-cantilevers applications

2012

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An investigation of all oxides ferroelectric capacitors based on \(SrRuO_3/BaTiO_3/SrRuO_3\) multi-layers grown on sacrificial oxide layers of \(YBa_2Cu_3O_7\)\ud and MgO for Micro-Electo-Mechanical systems applications is reported. By insertion of additional MgO or \(SrTiO_3\) buffer layers the orientation of the \(BaTiO_3\) film can be controlled allowing the fabrication of suspended cantilevers using the 31 and the 33 piezoelectric modes. The electrical properties of \(SrRuO_3/BaTiO_3/SrRuO_3\) capacitors are changed compared with those grown directly on a single crystal substrate by the introduction of sacrificial layers. Circuit modeling of the electrical characteristics of these devices shows that a reduction of the deposition pressure for \(BaTiO_3\) produces a decrease of the parasitic shunting conductance (modeled with a resistor in parallel to the capacitance of the device) which reduces the resistive loss present in the \(BaTiO_3\) film. However for extremely low deposition pressure the quality of the polarization hysteresis loops is compromised.\ud Particulates present on the surface of the \(YBa_2Cu_3O_7\)increases the parasitic conductance at low frequency in the capacitive structure grown on this sacrificial layer. Good electrical properties are obtained for the capacitive structures grown on top of the MgO sacrificial layers at pressures equal or lower than 8 Pa.\u

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