Pulsed laser deposition of (Co, Fe)-doped ZnSnSb and MnGeSb thin films on silicon

Bulk polycrystalline MnGexSby materials doped with Co or Fe were prepared and investigated with the aim of obtaining new diluted magnetic semiconductor (DMS) materials. An innovative preparation method was also established. Investigation techniques like X-ray diffraction (XRD), Raman scattering, and scanning electron microscopy (SEM) associated with energy dispersive X-ray analysis (EDX) have been employed to derive the structural properties and the composition of the bulk material.

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“…Analyses performed sufficiently away from the inclusions resulted in MnGe 0.9 Sb 2.32 . [8]. 4b) samples recorded in Brag-Brentano mode.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Bulk Polycrystalline MnGexSby (x = 0.5-1.0; y = 1.5-2.2) Doped with Co or Fe

Rusu

Tenciu

Zoita

et al. 2015

AMM

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“…Typically, these substances are semiconductors that have been slightly doped with magnetic transition metals such as manganese (Mn), chromium (Cr), or cobalt (Co). [ 45 ] These magnetic impurities may introduce fascinating and distinctive features within the semiconductor lattice. The fact that DMS exhibits room‐temperature ferromagnetism (and can maintain its magnetic properties even at quite high temperatures) is one of its most prominent features.…”

Section: Diluted Magnetic Semiconductors and Their Classificationsmentioning

confidence: 99%

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

Abera,

Mekuye

2023

Nano Select

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The main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in the fields of spintronics and magnetic devices. The magnetic moment caused by adding manganese to the GaAs crystal structure causes a low‐temperature ferromagnetic behavior. The main factor that affects the ferromagnetic properties of Mn‐doped gallium arsenic is manganese concentration. Understanding the relationship between Mn concentration and magnetic properties is important for material optimization in specific applications. It was found that Mn‐doped GaAs exhibit paramagnetic behavior below a specific critical concentration. However, the substance is transformed into a ferromagnetic state over the maximum concentration. The Curie temperature is an important additional factor influencing the ferromagnetic properties of Mn‐doped GaAs. The temperature at which a material ceases to exhibit ferromagnetic behavior is known as the Curie temperature. The Curie temperature of a material depends on its Mn concentration, thin film thickness, and degree of disturbance. A reduction in magnetic resistance increases the concentration of Mn‐treated gallium arsenic and increases its rate as it reaches its maximum value. High Curie temperatures are the result of stronger magnetic interactions resulting from higher manganese concentrations. The specific heat capacity of Mn‐doped gallium arsenide is influenced by its magnetic and structural contribution.

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Pulsed laser deposition of (Co, Fe)-doped ZnSnSb and MnGeSb thin films on silicon

Cited by 2 publications

References 42 publications

Preparation of Bulk Polycrystalline MnGe<sub>x</sub>Sb<sub>y</sub> (x = 0.5-1.0; y = 1.5-2.2) Doped with Co or Fe

Preparation of Bulk Polycrystalline MnGe<sub>x</sub>Sb<sub>y</sub> (x = 0.5-1.0; y = 1.5-2.2) Doped with Co or Fe

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

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