1999
DOI: 10.1016/s0040-6090(98)01161-4
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Pulsed laser deposition of ilmenite FeTiO 3 epitaxial thin film onto sapphire substrate

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Cited by 30 publications
(8 citation statements)
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“…25 It is weakly magnetic, 23 exhibits a wide band gap (2.58–2.9 eV), and finds application in visible light antiferromagnetic semiconducting materials with a Neel temperature of around 52 K. The wide band gap of FT makes it a potential candidate for spintronic devices, optoelectronics, high-temperature integrated circuit, high-power electronic devices, and photocatalyst activities. 2628 The rhombohedral crystal structure of titanates possess diverse properties. 20,26…”
Section: Introductionmentioning
confidence: 99%
“…25 It is weakly magnetic, 23 exhibits a wide band gap (2.58–2.9 eV), and finds application in visible light antiferromagnetic semiconducting materials with a Neel temperature of around 52 K. The wide band gap of FT makes it a potential candidate for spintronic devices, optoelectronics, high-temperature integrated circuit, high-power electronic devices, and photocatalyst activities. 2628 The rhombohedral crystal structure of titanates possess diverse properties. 20,26…”
Section: Introductionmentioning
confidence: 99%
“…FeTiO 3 is an interesting wide bandgap (2.58-2.9 eV) antiferromagnetic semiconductor [8,9] with potential applications in spintronics, optoelectronics, high temperature integrated circuits, chemical catalysts and photocatalysts etc. [10][11][12][13]. Most of the efforts have been devoted for designing ferromagnetic semiconductors operating at room temperature on homogeneous doping of semiconductors with magnetic impurities [14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…It was reported that FeTiO 3 could be synthesized by using solid-state reaction above 1200 1C under vacuum [21][22][23]. Popular techniques that have been employed to synthesize FeTiO 3 in the recent year include ball milling [24], chemical reduction techniques [11], co-precipitation [25] etc. The structural, optical, electrical and magnetic properties of FeTiO 3 are strongly influenced by the preparation technique [26].…”
Section: Introductionmentioning
confidence: 99%
“…Ilmenite (FeTiO 3 ) is one of the most common minerals in the Earth's crust. It is also a wide bandgap (2.58-2.9 eV) antiferromagnetic semiconductor [19,20], and it has potential applications in spintronics, high temperature integrated circuits, high power electronic devices, chemical catalysts, and photocatalysts [21][22][23][24]. Therefore, it has been extensively studied in all its varieties.…”
Section: Introductionmentioning
confidence: 99%