Pulsed-laser deposition of InSe thin films for the detection of thickness-dependent bandgap modification

Zheng, Dingheng; Shiogai, Junichi; Fujiwara, K.; Tsukazaki, Atsushi

doi:10.1063/1.5064736

Cited by 9 publications

(4 citation statements)

References 31 publications

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“…also reported the InSe thin film deposited by the PLD method. [ 151 ] In this work, the thickness of InSe thin film shows a linear relationship to the duration of deposition with an empirical average growth rate of 6.1±0.2 nm min −1 , which indicates a precise control of thickness for the PLD method.…”

Section: Synthesis Strategiesmentioning

confidence: 62%

Properties, Synthesis, and Device Applications of 2D Layered InSe

Dai

Gao

Nie

et al. 2022

Adv Materials Technologies

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Since monolayer graphitic film was successfully exfoliated by using scotch tape in 2004, [3] 2D materials like carbon group, transition metal dichalcogenides (TMDs), and layered metal oxides have received considerable attention and provided brand-new potential in nano-scale electronic devices. [4][5][6][7] Differ from 3D materials, 2D materials possess strong chemical bonds in each layer and weak van der Waals (vdW) forces between the adjacent layers. [8] The monolayer and fewlayer sheets of 2D layered materials can be obtained via various synthesis methods such as micromechanical exfoliation, [9] liquid exfoliation, [10] and chemical vapor deposition (CVD). [7] Due to the weak vdW force, the thermal and lattice mismatches between different materials become insignificant, which is conducive to construct heterostructure. [11][12][13] Additionally, there are no dangling bands on the 2D material surface owing to the sheet structure, thus such an excellent feature allows carrier scattering to be largely eliminated compared to bulk semiconductors. Besides, the inherent ultrathin properties enable the enhanced gate modulation effect, mitigating SCEs. All these remarkable merits of 2D materials render them promising candidates for sub-10 nm FETs. [14][15][16] Furthermore, 2D layered structure materials with high surface area, flexibility, unique optical and electronic properties are also potentially feasible for application in micro-electromechanical systems (MEMS), optoelectronics, biosensors, super capacitors, and solar cells. [7,[17][18][19][20][21] Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because of its excellent fundamental properties, such as ultrahigh carrier mobility, layer-tunable bandgap, large elastic deformability, and rich polytypes. In addition, 2D layered indium selenide has demonstrated outstanding device performance including photodetector, fieldeffect transistor, memory and synapse, mechanical and gas sensor, which has offered a new chance to next-generation electrical and optoelectronic devices. This review presents a comprehensive summary of recent progress in 2D layered indium selenide. The novel fundamental properties and synthetic methods are summarized. Also, the indium selenide-based stateof-the-art electronic/optoelectronic devices, such as a functional field-effect transistor, photodetector, and mechanical and gas sensors are systematically summarized. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities as a guideline for this field is provided.

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Section: Synthesis Strategiesmentioning

confidence: 62%

Properties, Synthesis, and Device Applications of 2D Layered InSe

Dai

Gao

Nie

et al. 2022

Adv Materials Technologies

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“…On the other side, bottom-up methods can prepare InSe flakes for large-scale production. The bottom-up methods include pulsed laser deposition (PLD) [68][69][70], physical vapor deposition (PVD) [71], wet chemical methods [72], chemical vapor deposition (CVD) [73,74], and molecular beam epitaxy (MBE) [75].…”

Section: The Synthesis Of 2d Insementioning

confidence: 99%

Carrier and phonon transport in 2D InSe and its Janus structures

Wan¹,

Guo²,

Ge³

et al. 2023

J. Phys.: Condens. Matter

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Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation, the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.

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“…Although the exfoliation methods have been widely used to investigate 2D III-VI semiconductors’ exceptional electrical properties, synthesizing large-area high-quality layered materials still requires bottom-up strategies, which are more suitable to be realized for industrial applications. To date, epitaxial growth by chemical vapor deposition (CVD), pulsed laser deposition (PLD), or molecular beam epitaxy (MBE) has been used for the synthesis of 2D III-VI metal chalcogenides [ 10 , 11 , 12 , 13 , 14 , 15 ]. However, the synthesis of single-phase indium selenide is still a challenge by chemical vapor deposition (CVD).…”

Section: Introductionmentioning

confidence: 99%

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

Huang

et al. 2022

Nanomaterials

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Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system. Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are attractive for future field-effect transistor and optoelectronic devices. However, growing single-phase γ-InSe film is a challenge due to the polymorphic nature of indium selenide (γ-InSe, α-In2Se3, β-In2Se3, γ-In2Se3, etc.). In this work, the 2D α-In2Se3 film was first grown on a sapphire substrate by MBE. Then, the high In/Se ratio sources were deposited on the α-In2Se3 surface, and an γ-InSe crystal emerged via solid-phase epitaxy. After 50 min of deposition, the initially 2D α-In2Se3 phase was also transformed into a 2D γ-InSe crystal. The phase transition from 2D α-In2Se3 to γ-InSe was confirmed by Raman, XRD, and TEM analysis. The structural ordering of 2D γ-InSe film was characterized by synchrotron-based grazing-incidence wide-angle x-ray scattering (GIWAXS).

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Pulsed-laser deposition of InSe thin films for the detection of thickness-dependent bandgap modification

Cited by 9 publications

References 31 publications

Properties, Synthesis, and Device Applications of 2D Layered InSe

Properties, Synthesis, and Device Applications of 2D Layered InSe

Carrier and phonon transport in 2D InSe and its Janus structures

Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

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