Pulsed laser deposition of thin Pr O films on Si(1 0 0)

Wolfframm, D.; Ratzke, Markus; Kappa, Mathias; Montenegro, M. J.; Döbeli, M.; Lippert, Thomas; Reif, J.

doi:10.1016/j.mseb.2003.10.022

Cited by 38 publications

(30 citation statements)

References 21 publications

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“…Morphologically, the produced layers consist of a smooth background and micron-sized "droplets". The chemical composition, confirmed earlier by x-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy [8], is characterized by the presence of two charge states of the praseodymium ions (Pr 3+ and Pr 4+ ) and an oxygen to praseodymium ratio of about 1.6/1.…”

supporting

confidence: 66%

Fixed charge density distribution on pulsed laser deposited high‐k oxide layers

Ratzke

Bin

Reif

2008

Phys. Status Solidi (c)

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We report on Scanning Kelvin Probe Microscopy of thin praseodymium oxide layers produced by pulsed laser deposition on silicon substrates. These measurements allow an almost direct quantification of the charge state of both interface and bulk of the films. Surprisingly, we find an apparent change in the charge distribution as a result of exposing the structure to ambient air: Immediately after deposition, negative charges are trapped at the interface between film and silicon substrate, and positive charges in the film bulk. After exposure to ambient air for about a week, a dramatic change of surface potentials is observed, including the sign of the charges.Whereas the influence of growth related parameters like film thickness on the surface potential by can be easily investigated, the role of ageing under ambient conditions is, presently, by far not understood. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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supporting

confidence: 66%

Fixed charge density distribution on pulsed laser deposited high‐k oxide layers

Ratzke

Bin

Reif

2008

Phys. Status Solidi (c)

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“…It is therefore likely that the oxidation state is some where between these values-mixed Pr x O y films consisting of both Pr 2 O 3 and Pr 6 O 11 have been reported. 21 Moreover, the Pr 3+ doped sample was black on the surface, but pale greyishyellow on the underside and interior, suggesting that the dopant has been oxidised to higher valence only where exposed to air.…”

Section: Doped Tio 2 Samplesmentioning

confidence: 99%

Dielectric loss caused by oxygen vacancies in titania ceramics

Pullar

Penn

Wang

et al. 2009

Journal of the European Ceramic Society

164

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“…This value is quite close to that reported by Duran et al 16 The detailed shape of the Pr 3d 5/2 XPS signal can be fitted assuming the contributions of four components belonging to two different states of the Pr ions. 17 One is Pr 4+ with peaks at ϳ935.0 and ϳ931.0 eV, and the other is Pr 3+ with peaks at ϳ933.4 and ϳ929.0 eV, respectively. Comparing Fig.…”

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confidence: 97%

Effect of oxygen vacancies on the red emission of SrTiO3:Pr3+ phosphor films

Wang

Jiang

Shen

et al. 2009

Applied Physics Letters

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The red emission of the Pr3+ ions was very sensitive to the oxygen vacancies in the host of 300-nm-thick SrTiO3 films. Comparing with the air-annealed films, a significant enhancement of up to 400% was observed in the red photoluminescence intensity for the vacuum-annealed samples, and the valence state of the Pr ions was found to be changed little. Based on the fact of the obvious overlap between the excitation band of the Pr3+ ions and emission band of the oxygen vacancies, it was suggested that the oxygen vacancies act as a sensitizer for the effective energy transfer from SrTiO3 host to Pr3+ ions. This study demonstrated that the red emission from Pr3+ ions in SrTiO3 was closely related to the oxygen vacancies.

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Pulsed laser deposition of thin Pr O films on Si(1 0 0)

Cited by 38 publications

References 21 publications

Fixed charge density distribution on pulsed laser deposited high‐k oxide layers

Fixed charge density distribution on pulsed laser deposited high‐k oxide layers

Dielectric loss caused by oxygen vacancies in titania ceramics

Effect of oxygen vacancies on the red emission of SrTiO3:Pr3+ phosphor films

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