Pulsed Laser Deposition of Transition Metal Dichalcogenides-Based Heterostructures for Efficient Photodetection

Abstract

From the past few decades, photodetectors (PDs) are being regarded as crucial components of many photonic devices which are being used in various important applications. However, the PDs based on the traditional bulk semiconductors still face a lot of challenges as far as the device performance is concerned. To overcome these limitations, a novel class of two-dimensional materials known as transition metal dichalcogenides (TMDCs) has shown great promise. The TMDCs-based PDs have been reported to exhibit competitive figures of merit to the state-of-the-art PDs, however, their production is still limited to laboratory scale due to limitations in the conventional fabrication methods. Compared to these traditional synthesis approaches, the technique of pulsed laser deposition (PLD) offers several merits. PLD is a physical vapor deposition approach, which is performed in an ultrahigh-vacuum environment. Therefore, the products are expected to be clean and free from contaminants. Most importantly, PLD enables actualization of large-area thin films, which can have a significant potential in the modern semiconductor industry. In the current chapter, the growth of TMDCs by PLD for applications in photodetection has been discussed, with a detailed analysis on the recent advancements in this area. The chapter will be concluded by providing an outlook and perspective on the strategies to overcome the shortcomings associated with the current devices.

A review of novel methods to improve the optical and electrical properties of n-type and p-type sulphides and oxides: leading the frontiers of semiconductor technology

“…One such technique is the use of chemical bath deposition (CBD), which has been shown to produce high-quality sulphide films with improved electrical and optical properties [120]. Another technique is the use of pulsed laser deposition (PLD), which allows precise control over the film thickness and composition, resulting in high-quality films with improved electrical and optical properties [121]. In summary, growth conditions and techniques play a crucial role in determining the electrical and optical properties of oxide and sulphide films.…”