Pulsed‐Laser Deposition of ZnO Nanowires

Dietrich, Christof P.; Grundmann, Marius

doi:10.1002/9781118984321.ch12

Cited by 5 publications

(6 citation statements)

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“…the growth of well-oriented verticaly aligned NWs without using a catalyst, is pulsed laser deposition (PLD). The growth of NWs by PLD was introduced about one decade ago [ 16 ] and is now a well-established technique [ 17 ]. This growth represents a trade-off between simplicity and controlling of the NWs’ properties [ 16 – 18 ].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

et al. 2017

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ZnO nanowires (NWs) are used as building blocks for a wide range of different devices, e.g. light emitters, resonators, and sensors. Integration of the NWs into such structures requires a high level of NWs’ diameter control. Here, we present that the doping concentration of ZnxAl1−xO and ZnxGa1−xO seed layers has a strong impact on the NW growth and allows to tune the diameter of the NWs by two orders of magnitude down to less than 7 nm. These ultrathin NWs exhibit a well-oriented vertical growth and thus are promising for the investigation of quantum effects. The doping of the ZnO seed layers has also an impact on the deposition temperature which can be reduced down to T≈400∘C. This temperature is much smaller than those typically used for the fabrication of NWs by pulsed laser deposition. A comparison of the NWs indicates a stronger impact of the Ga doping on the NW growth than for the Al doping which we attribute to an impact of the size of the dopants. The optical properties of the NWs were investigated by cathodoluminescence spectroscopy which revealed a high crystalline quality. For the thin nanowires, the emission characteristic is mainly determined by the properties of the surface near region.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-017-1906-2) contains supplementary material, which is available to authorized users.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

et al. 2017

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“…8,22 At the beginning of the deposition only small number of ZnO particles leads to the growth of NWs with constant diameter along the NWs length. With increasing number of particles, i.e.…”

confidence: 99%

“…6 For the fabrication of these NWs and NNs the self organized growth of ZnO is typically leading to crystalline ZnO structures which are well oriented perpendicular to the surface. 7,8 The optimum design, i.e. geometrical shape, orientation and density of the NWs and NNs depends on the desired functionality of the devices.…”

confidence: 99%

“…We take advantage of self-organized growth of a dense, well oriented, high crystalline ZnO NWs on a-and c-plane sapphire as observed by several groups. 8,17 We used a structured r-plane oriented sapphire substrate containing only one tilted c-facet which support the growth of a high density NW array whereas, the other facets suppress the NWs growth. The structured sapphire substrates were achieved by etching an r-plane sapphire substrate making use of the strong anisotropy of the etching rate following the different cristallographic planes.…”

confidence: 99%

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Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

et al. 2016

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We report the possibility to control the tilting of nanoneedles and nanowires by using structured sapphire substrates. The advantage of the reported strategy is to obtain well oriented growth along a single direction tilted with respect to the surface normal, whereas the growth in other directions is suppressed. In our particular case, the nanostructures are tilted with respect to the surface normal by an angle of 58°. Moreover, we demonstrate that variation of the nanostructures shape from nanoneedles to cylindrical nanowires by using SiO2 layer is observed.

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“…Preparation of thin films, especially for nanoscale optoelectronics is carried out in many ways such as pulsed laser deposition [114], ion implantation [115], sputtering [116], chemical vapour deposition (CVD) [117], electron beam evaporation [118], electro deposition [119] and sol-gel process. Amongst all the different thin film deposition techniques, the sol-gel process and sputtering technique have been used to fabricate the thin film samples used in this work.…”

Section: Fundamentals Of Thin Film Preparationmentioning

confidence: 99%

Efficient energy transfer from zinc oxide nanocrystals to europium (3+) and terbium (3+) ions embedded in an oxide matrix

Mangalam¹

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Pulsed‐Laser Deposition of ZnO Nanowires

Cited by 5 publications

References 57 publications

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

Low-Temperature PLD-Growth of Ultrathin ZnO Nanowires by Using Zn x Al1−x O and Zn x Ga1−x O Seed Layers

Selective growth of tilted ZnO nanoneedles and nanowires by PLD on patterned sapphire substrates

Efficient energy transfer from zinc oxide nanocrystals to europium (3+) and terbium (3+) ions embedded in an oxide matrix

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