Pulsed Laser Deposition (PLD)

Fujioka, Hiroshi

doi:10.1016/b978-0-444-63304-0.00008-1

Cited by 16 publications

(8 citation statements)

References 142 publications

(156 reference statements)

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“…Thin films are usually the most useful form for electronic device applications, and will be the focus in this Review. Thin film transparent chalcogenides have been synthesized by (1) physical vapor deposition (PVD), including sputtering, pulsed laser deposition (PLD), and thermal or electron-beam evaporation, , molecular beam epitaxy (MBE), , by (2) chemical vapor deposition, usually involving some reactions between precursors, such as atomic layer deposition (ALD), , metal organic chemical vapor deposition (MOCVD), and plasma-enhanced chemical vapor deposition (PECVD), or by (3) solution processes, including spray pyrolysis, sol–gel, , and chemical bath deposition (CBD) . Postdeposition treatments can be applied to enhance crystallinity or introduce dopants, such as exposure to gas (e.g., sulfurization and selenization, common in chalcopyrite materials) and rapid thermal annealing, and films can be doped via ion implantation or diffusion.…”

Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Materials Properties and Research Methodsmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“…Furthermore, laser depositions possess the ability to carry out film deposition in in situ annealing and patterning. 166,167 Nevertheless, the prevalent use of PLD has been restricted due to its higher substrate temperature, which is normally between the temperatures of 400 C and 800 C. An efficient deposition is dependent on the target material type, the laser's pulse energy, rate of repetition, the distance of the target substrate, and the temperature of the substrate. Over the years, there have been several studies that applied the use of PLD in the fabrication of one battery component or the other (electrode, electrolyte, electrode coatings) for application in LIBs.…”

Section: Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

“…With the absorption of the laser power by the target, several particles are removed, which include atoms, electrons, clusters, and ions. Furthermore, laser depositions possess the ability to carry out film deposition in in situ annealing and patterning 166,167 . Nevertheless, the prevalent use of PLD has been restricted due to its higher substrate temperature, which is normally between the temperatures of 400°C and 800°C.…”

Section: Atomic Layer Deposition (Ald) Processmentioning

confidence: 99%

An overview of the application of atomic layer deposition process for lithium‐ion based batteries

Nwanna

Bitire

Imoisili

et al. 2022

Intl J of Energy Research

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Lithium-ion battery (LIB) systems provide a very promising range of power supply systems for diverse applications like electric vehicles, hybrid plug-in electric vehicles, grid storage systems, and microelectronics. Nevertheless, the features of lithium-ion batteries (LIBs), which include energy density and power, cycle lifetime, safety, as well as cost, must be enhanced in order to achieve all these feasible applications. Atomic layer deposition (ALD), as a result of its unique benefits above other thin-film methods of deposition, emerges as a very useful approach for use in improving the efficiency of LIBs. This review summarizes ALD's advanced successes in designing new nanostructured solid-state electrolytes and electrode materials, as well as the adjustment of the interfaces of electrodes and electrolytes through the application of surface coatings for the avoidance of undesirable side reactions to attain maximum adequate performance of the electrode. Also covered are ideas for the potential advancement of ALD studies and technology for the applications of LIBs. This review paper is anticipated to furnish researchers within the LIB and ALD fields with valuable information that would encourage much more extensive research on the use of ALD to produce new generation LIBs.Novelty Statement: This review presents the recent advancements in electrode materials as well as some new electrode fabrication processes for Li-ion batteries. Certain prospective materials with improved electrochemical performance have also been reported, along with a review of the recent precursors utilized for the ALD of battery materials. The efficiency of the ALD process in providing sufficient solutions to the problems associated with the utilization of Lithium-ion batteries is also discussed.

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“…Smith and Turner discovered it in 1965 for the preparation of semiconductors [22]. This deposition technique has been used for a variety of oxides, nitrides, carbides, and other materials [23]. A pulsed and focused laser beam strikes elementary or alloy targets at a 45° angle in an ultrahigh vacuum (UHV) chamber.…”

Section: Introductionmentioning

confidence: 99%

Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications

Kumar

Praneeth

Al-Shidaifat

et al. 2023

Preprint

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With the utilization of UV-C radiation sterilizers on the ascension in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill effects on humans. This requires detection systems with felicitous spectral replication to the “invisible to the unclad eye” radiation leaks with utmost sensitivity and swiftness. Gallium Oxide (Ga2O3), a semiconductor, has gained a lot of attention among researchers due to its ultra-wideband gap (4.9eV) and high critical field with a value of 8 MV/cm. It is Transparent Conductive Oxide (TCO). Ga2O3 has five different atomic structures of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), and orthorhombic (ε) structures. Of these, the β-polymorph is selected because of band gap energy (Eg ≈ 4.7–4.9 eV), it is highly stable in thermal and chemical properties. In this context, the present article demonstrates the best and most suitable technique for the deposition of β-Ga2O3 (Gallium Oxide). This work demonstrates the layer deposition of β-Ga2O3 (Gallium Oxide) thin-film with MIST-CVD (Chemical Vapor Deposition) and optimization of the deposited layer to the extent of using different techniques and analyzing different plots. This deposited layer on a substrate is used for applications of gas sensors or Ultraviolet-Photodetectors (UV-PDs. This article has also demonstrated the successful application of optimized thin film for gas sensing.

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Pulsed Laser Deposition (PLD)

Cited by 16 publications

References 142 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

An overview of the application of atomic layer deposition process for lithium‐ion based batteries

Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications

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