2012
DOI: 10.1016/j.jpcs.2012.03.002
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Pulsed laser induced damage in SOI material

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Cited by 2 publications
(2 citation statements)
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“…Fundamental set-up for the measurement of laser induced damage thresholds [LIDT] are described in this article [76]. A report is given by Fu, et al [79] on an experimental investigation on laser induced damage behavior in Silicon-On-Insulator (SOI) material at room temperature for laser pulses with duration ranging from 190 picosecond to 1.14 s. Such material is widely recognized as a promising substrate material because it possesses considerable advantage as compared to bulk silicon. So it has found extensive applications in optoelectronics, such as optical waveguides, optical couplers and photonic crystals which have been widely implemented on SOI substrate.…”
mentioning
confidence: 99%
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“…Fundamental set-up for the measurement of laser induced damage thresholds [LIDT] are described in this article [76]. A report is given by Fu, et al [79] on an experimental investigation on laser induced damage behavior in Silicon-On-Insulator (SOI) material at room temperature for laser pulses with duration ranging from 190 picosecond to 1.14 s. Such material is widely recognized as a promising substrate material because it possesses considerable advantage as compared to bulk silicon. So it has found extensive applications in optoelectronics, such as optical waveguides, optical couplers and photonic crystals which have been widely implemented on SOI substrate.…”
mentioning
confidence: 99%
“…So it has found extensive applications in optoelectronics, such as optical waveguides, optical couplers and photonic crystals which have been widely implemented on SOI substrate. Such material is investigated [79] with 1064 nm laser pulses. Gaussian laser beam profile is assumed.…”
mentioning
confidence: 99%