2016
DOI: 10.3390/ma9070509
|View full text |Cite
|
Sign up to set email alerts
|

Pulsed Laser Porosification of Silicon Thin Films

Abstract: We present a new and simple laser-based process to porosify thin film silicon using a pulsed laser. During deposition, we incorporate gas atoms or molecules into the Si thin film. Pulsed laser radiation of wavelength λ=5324ptnm heats up thin film Si beyond its melting point. Upon heating, gas atoms or molecules form nm-sized thermally expanding gas bubbles in the silicon melt, until they explosively exit the film, leaving pores behind. Rapid heating and fast cooling during pulsed laser processing enable re-sol… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2017
2017
2024
2024

Publication Types

Select...
4
1

Relationship

1
4

Authors

Journals

citations
Cited by 7 publications
(4 citation statements)
references
References 20 publications
0
4
0
Order By: Relevance
“…As soon as the silicon melts, the absorption increases even faster causing a melting catastrophe leaving bubbles, tubes, and holes behind as demonstrated in figure 4. These structures prevent the creation of highly ordered crystallized TiO 2 on the surface and are a clear sign that a significant amount of silicon was molten [37].…”
Section: Structures Obtained Via Laser-induced Melting Of Anatase Tiomentioning
confidence: 99%
“…As soon as the silicon melts, the absorption increases even faster causing a melting catastrophe leaving bubbles, tubes, and holes behind as demonstrated in figure 4. These structures prevent the creation of highly ordered crystallized TiO 2 on the surface and are a clear sign that a significant amount of silicon was molten [37].…”
Section: Structures Obtained Via Laser-induced Melting Of Anatase Tiomentioning
confidence: 99%
“…[41,45] Recent progress in laser processing of silicon-based materials for LIBs includes laser drying of electrode films, ultrafast laser ablation to create grid-structured silicon films, laser porosification of silicon thin films, and laser conversion of commercial silicone-based adhesive tapes to silicon oxide thin films. [46][47][48][49][50][51][52][53][54][55] Although the synthesis processes and battery performance such as rate capability have been improved, poor cycle life remains as a serious issue.…”
Section: Introductionmentioning
confidence: 99%
“…In our previous study, we proved laser induced crystallization of the Si thin films during porosification by Raman spectroscopy. [31] Hence, plain Si is amorphous and porous Si is crystalline before the galvanostatic cycling. An initial lithiation and delithiation of the Si electrode once at C/20 current rate followed by one cycle at C/5 rate serve as formation of the silicon electrode using C charge = 932 mAh g −1 as rated capacity.…”
Section: Doi: 101002/aenm201701705mentioning
confidence: 99%
“…After the deposition, a laser porosification process uses the incorporated Ar as source for pore creation in the thin film. [31] Figure 1a-c schematically presents the Si anodes manufacturing steps. Figure 1a shows the laser porosification process.…”
Section: Doi: 101002/aenm201701705mentioning
confidence: 99%