Pulsed laser-stimulated surface acoustic waves in p-CdTe crystals

Baidullaeva, A.; Vlasenko, A. I.; Kuznetsov, Evgeny; Lomovtsev, A. V.; Mozol, P. E.; Smirnov, A. B.

doi:10.1134/1.1393028

Cited by 5 publications

(12 citation statements)

References 3 publications

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“…For CdTe, at E = 0.4 J/cm 2 (I = 20 MW/cm 2 ), the SW propagation depth is ~15.6 μm. As experimental results show, the depth at which the properties of the material change (3-5 μm [7]) is smaller than the depth at which a shockwave is formed. The formation of nanoislands beyond the irradi ated area on the sample surface cannot be explained as well by heating the irradiated part of the crystal, because, in the case under consideration, heating to considerable temperatures in a time of 2 × 10 -8 s occurs within the distance L = 0.35 μm, which is much smaller than the length of the sample area under study.…”

Section: Discussionmentioning

confidence: 90%

On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation

et al. 2015

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Section: Discussionmentioning

confidence: 90%

On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation

et al. 2015

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“…At the instant the material bursts from zone 1, a pressure wave caused by the temperature coefficient of linear expansion of the vapor extrudes the melt from zone 2 onto the surface. 6 In zone 3, according to the literature data (for wavelengths greater than 0.531 μm), an increase is recorded in the dislocation concentration in silicon and in other semiconductor materials, for example, in CdTe, 11 the appearance of new and the disappearance of existing electronic levels in the band gap in Si, 12 and variation of the chemical composition in the compound HgCdTe. 13 We should point out that similar changes are recorded in zones 3 and 4 for various semiconductor materials.…”

Section: Part I the High-precision Process Of Butt-joining Silicon Cmentioning

confidence: 92%

Image conversion in uncooled mosaic microbolometer detectors for the IR and terahertz regions with a format up to 3072 × 576 or more

et al. 2014

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This paper discusses the process-design principles for creating hyperlarge-format mosaic photodetectors (MPDs), based on the butt-joining process of silicon chips with uncooled small-format microbolometer detector arrays (MBDAs). The basic unit is investigated and optimized for the process operations of laser scribing as part of the high-precision butt-joining process of chips in which the process part of the blind zone between the photosensitive edge elements of adjacent MBDA chips has a total size no greater than 30 μm. The design and layout are synthesized for 384 × 288-format silicon multiplexers, from which a 3072 × 576-format MPD fabricated using the butt-joining process developed here can provide better than 99% image-conversion efficiency for IR microbolometers and up to 100% for terahertz-range microbolometers.

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“…With further increase in U, this dependence becomes superlinear with the following transformation to the exponential form I = U/R 0 ·exp[U/U 0 ], which remains unchanged up to switching voltage. Here R 0 и U 0 are the parameters having dimension of the resistance and voltage, respectively.The absence of the second turning point in the voltage-current characteristic in the range of high currents is typical of a thermal mechanism of electric instability [5]. The thermal mechanism of switching of the S-type manifests itself, if the majority charge-carrier (CC) concentration quite rapidly increases with the temperature of the crystal due to the Joule heat.…”

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confidence: 99%

“…The absence of the second turning point in the voltage-current characteristic in the range of high currents is typical of a thermal mechanism of electric instability [5]. The thermal mechanism of switching of the S-type manifests itself, if the majority charge-carrier (CC) concentration quite rapidly increases with the temperature of the crystal due to the Joule heat.…”

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confidence: 99%

Electric Instability in n-CdTe:In Layers with S-Shaped Voltage-Current Characteristics

Senokosov¹,

Makarevich²,

Sorochan³

2005

Russ Phys J

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A switching of the S-type in the 20-200 µm thick polycrystalline n-CdTe:In layers with resistance of 10 3 -10 6 Ω·cm is studied. The electric instability in the layers is found to be due to the electron-thermal breakdown mechanism. The dependence of the switching threshold parameters on the intensity of exposure can be used for fabrication of infrared-radiation controlled electric switches on the basis of n-CdTe:In layers.А 2 В 6 semiconductor compounds find application in production of solar cells, radiation detectors, IR-devices, etc. To extend the field of application, new principles of operation of these devices should be found. As known [1][2][3][4], the CdTe bulk crystals and thin films can switch on from a high-resistance state to a low-resistance one, that is, they have S-shaped voltage-current characteristics (VCC). However, the switching mechanism in GdTe is not completely understood.In this work, the electric switching of the S-type in the 20-200 µm thick polycrystalline n-CdTe:In layers with resistance of 10 3 -10 6 Ω·cm is studied. The layers were produced on glass substrates by a vacuum deposition technique in the quasi-closed volume and doped with donors using co-evaporation of an indium dopant.The indium films deposited on free surfaces of the layers with the gap of 1 mm by a vacuum condensation technique served as non-rectifying contacts to the n-CdTe:In layers. The voltage-current characteristics of the In-n-CdTe:In-In samples were studied in vacuum at room temperature in a static regime. The switching kinetics was studied using a square-wave generator and an oscillograph. Use was made of the pulses with duration 0.5-65 µs, frequency 7 Hz -1 kHz, and amplitude 200 V.All In-n-CdTe:In-In samples under study have symmetric voltage-current characteristics where the second turning point of the transition to the positive differential resistance is absent in the range of high currents. The switching to the lowresistance state occurs by a jump. The switching time is about 10 -3 s. Figure 1 shows that each subsequent switching of the S-type in In-n-CdTe:In-In samples occurs at lower voltages (curves 1, 2). The transition to a steady state is observed upon 4-5 switching cycles (curve 3). In a steady state, the threshold switching parameters (voltage U p and current I p ) remain unaffected from cycle to cycle. The reverse trend of the voltage-current characteristic mismatches the direct one (cf. curves 3 and 4).The voltage-current characteristics of In-n-CdTe:In-In samples measured at U < 15-35 V are linear. With further increase in U, this dependence becomes superlinear with the following transformation to the exponential form I = U/R 0 ·exp[U/U 0 ], which remains unchanged up to switching voltage. Here R 0 и U 0 are the parameters having dimension of the resistance and voltage, respectively.The absence of the second turning point in the voltage-current characteristic in the range of high currents is typical of a thermal mechanism of electric instability [5]. The thermal mechanism of switching of the S-ty...

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Pulsed laser-stimulated surface acoustic waves in p-CdTe crystals

Cited by 5 publications

References 3 publications

On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation

On the formation of nanostructures on a CdTe surface, stimulated by surface acoustic waves under nanosecond laser irradiation

Image conversion in uncooled mosaic microbolometer detectors for the IR and terahertz regions with a format up to 3072 × 576 or more

Electric Instability in n-CdTe:In Layers with S-Shaped Voltage-Current Characteristics

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