Pulsed layer growth of AlInGaN nanostructures

Abstract

A pulsed layer growth mode in the metal‐organic vapor phase epitaxy (MOVPE) was used to fabricate excellent quality AlInGaN nanostructures. The amount of material was varied, resulting in AlInGaN layer thicknesses between nominally 1.5 nm and 6 nm, respectively. We have analyzed the material properties by X‐ray diffraction (XRD) as well as photoluminescence (PL) spectroscopy. The observed XRD‐spectra and the PL intensity show the high quality of the deposited material. By analyzing the PL spectra we have found an energetic shift of the resonance lines from 2.65 eV to 3.33 eV with decreasing well thickness. We attribute this shift mainly to the presence of internal electric fields at the AlIn‐GaN/GaN interface. Power‐dependent and time resolved PL experiments confirm this observation. Comparing the luminescence at elevated temperatures, the pulsed layer epitaxy structures reveal a much higher intensity as the conventional grown samples. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

“…Interference fringes confirm sharp interfaces inside the sample, and the evaluation of their separation shows that the origin of the fringes is a 25 nm thick layer. This corresponds directly to the GaN cap layer thickness and confirms the formation of a sharp AlInGaN/GaN interface due to the pulsed growth scheme [14]. In conventionally grown samples these fringes cannot be observed.…”

MOVPE grown quaternary AlInGaN layers for polarization matched quantum wells and efficient active regions

“…1a) and the evaluation of their separation shows that the origin of the fringes is a 25 nm thick layer. This corresponds directly to the intended thickness of the GaN cap layer and confirms the formation of a sharp AlInGaN/GaN interface due to the pulsed growth scheme [10]. In conventionally grown samples these fringes cannot be observed.…”

Polarization engineering of c‐plane InGaN quantum wells by pulsed‐flow growth of AlInGaN barriers

“…This technique separates the group‐III elements during growth and very low growth rates can also be achieved. The pulsed‐flow growth has been demonstrated to be beneficial for controlling composition, and to achieve high structural and optical quality of quaternary materials .…”