Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications

Lee, William J.; Fang, Yean–Kuen; Ho, Jyh-Jier; Chen, Chin‐Ying; Tsai, Rung-Ywan; Huang, Der‐Ray; Ho, F. C.; Chou, Hsiung; Chen, Chung‐Cheng

doi:10.1007/s11664-002-0159-7

Cited by 14 publications

(5 citation statements)

References 16 publications

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“…Because of these characteristics, ITO is widely used in optoelectronics devices. Examples of these devices include solar cells (SCs), liquid crystal displays (LCDs), and organic light emitting devices (OLEDs). − Especially in these recent years, OLED technology has emerged as a promising device for low-cost, full-color, flat-panel displays. These displays can efficiently operate with low-drive voltages.…”

Section: Introductionmentioning

confidence: 99%

The Work Function Improvement on Indium−Tin−Oxide Epitaxial Layers by Doping Treatment for Organic Light-Emitting Device Applications

Chen

Hsiao

et al. 2007

J. Phys. Chem. C

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In this paper, we present an approach to coating the thin high work function (HWF, with qφ m in eV) films on an indium tin oxide (ITO)/glass substrate. Thin HWF films are co-sputtered on an ITO using the vanadium (V +4 ion) dopant concentrations from 0% to 12.25%, and the qφ m values are increased from 4.80 to 5.25 eV, respectively. The HWF-ITO deposition condition is developed for organic light-emitting device (OLED) applications. The electro-luminescence (EL) improvement, in particular the turn-on voltage from 7.7 to 0.3 V, is well correlated with the work function change. The output luminance (in cd/m 2 ) at 10 V driving voltage of the developed OLED is increased from 35 K cd m -2 (at 5% V +4 -ion concentrations) to 75 K cd m -2 (at 5% V +4 -ion concentrations). These EL results with the HWF-ITO film are well above the OLED application standard.

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Section: Introductionmentioning

confidence: 99%

The Work Function Improvement on Indium−Tin−Oxide Epitaxial Layers by Doping Treatment for Organic Light-Emitting Device Applications

Chen

Hsiao

et al. 2007

J. Phys. Chem. C

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“…2 shows the XRD patterns of the annealed ITO nanocrystals at different temperatures together with that from ITO-I for comparison. One can see that the XRD patterns of ITO600, ITO700 and ITO800 are different from that of ITO-I and ITO500, as shown in curves (3)(4)(5) in Fig. 2, in which all the diffraction peaks can be indexed only to cubic In 2 O 3 , and that from the rhombohedral In 2 O 3 disappears, see the dash curves in Fig.…”

Section: Resultsmentioning

confidence: 95%

“…Indium tin oxide (ITO) is highly degenerate n-typed semiconductor, and has been widely used in transparent electrodes [1,2], displays [3,4], electrochromic windows [5] and solar cell [6][7][8] due to its controllable low resistivity and excellent optical properties. The conductivity of ITO is directly linked to the concentration of free carriers, while the latter is correlated to intrinsic oxygen vacancies in addition to the extrinsic n-type defects due to Sn 4+ substituting for In 3+ cations.…”

Section: Introductionmentioning

confidence: 99%

Influence of post-annealing on the structure and optical properties of ITO nanocrystals prepared by electrochemical method

Xu¹,

Wang²,

Ding³

et al. 2012

Materials Research Bulletin

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“…Touch-type display devices have varying types of multilayer stacks that comprise a complex series of layers of glass (or sapphire), optically clear adhesive (OCA), and indium tin oxide/polyethylene terephthalate (ITO/PET). The deposition of ITO on the PET layer has been a widely employed technique used to fabricate a transparent conducting layer in TSPs [5][6][7][8]. Although PET has been confirmed to be effective as an insulating layer, it has been reported to be a cause of the poor crystallinity of the deposited ITO, increased process complexity, and high cost.…”

Section: Introductionmentioning

confidence: 99%

ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

Joo

Loka

et al. 2020

Coatings

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The SiO2 generated by low-temperature oxidation of ultra-thin metallic silicon (thickness = 50 nm) film was evaluated for implementation in one-glass-solution capacitive touch-screen panels (OGS-TSPs) on sapphire-based substrates. Our results show that the silicon films oxidized at 823 K exhibited the highest visible transmittance about 91% at 550 nm, compared to ~72% transmittance of the as-deposited silicon films which were deposited at room temperature. Additionally, the annealed films exhibited a more uniform, dense, and smooth surface microstructure than that of the as-deposited Si films. X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO2. Furthermore, when the insulating SiO2 film obtained by low-temperature oxidation was sandwiched between two indium tin oxide (ITO) layers (ITO/SiO2/ITO) on a sapphire substrate, the SiO2 film resulted in the dielectric strength of approximately 3 MV/cm. In addition, the highest optical transmittance obtained by the ITO/SiO2/ITO films is about 88.3%. The change in capacitance of the ITO/SiO2/ITO structure was approximately 3.2 pF, which indicates the possibility of implementation in capacitive touch-screen panel devices.

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Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applications

Cited by 14 publications

References 16 publications

The Work Function Improvement on Indium−Tin−Oxide Epitaxial Layers by Doping Treatment for Organic Light-Emitting Device Applications

The Work Function Improvement on Indium−Tin−Oxide Epitaxial Layers by Doping Treatment for Organic Light-Emitting Device Applications

Influence of post-annealing on the structure and optical properties of ITO nanocrystals prepared by electrochemical method

ITO/SiO2/ITO Structure on a Sapphire Substrate Using the Oxidation of Ultra-Thin Si Films as an Insulating Layer for One-Glass-Solution Capacitive Touch-Screen Panels

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