Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

Bayram, Can; Péré‐Laperne, Nicolas; McClintock, Ryan P; Fain, B.; Razeghi, Manijeh

doi:10.1063/1.3104857

Cited by 29 publications

(17 citation statements)

References 21 publications

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“…2,13 This offers a wider range of effective band-gap ͑optical emission͒ tunability of both interband transitions 14 and improved intersubband transitions. [15][16][17] In particular, earlier experimental results for using ͑Ga,Al͒N as a barrier have shown that the band gap is set primarily by the thickness of the well layer, 16 as well as by the barrier width. 5 However, a systematic investigation, particularly from the theoretical side, of the dependence of the band gap of GaN/AlN ͑0001͒ multiple quantum wells ͑MQWs͒ ͑with a few dozen periods͒, on the thickness of both well and barrier is still missing.…”

Section: Introductionmentioning

confidence: 99%

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

et al. 2010

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Based on all-electron density-functional theory calculations using the generalized gradient approximation, we demonstrate the continuous tunability of the band gap and strength of the built-in electric field in GaN/AlN ͑0001͒ superlattices by control of the thickness of both the well ͑GaN͒ and barrier ͑AlN͒ regions. The effects of strain for these quantities are also studied. Calculations taking into account the self-interaction correction exhibit the same dependence on thickness. The calculated electric field strength values are in good agreement with recent experiments. Spontaneous polarization dominates the contribution to the electric field and the strain-induced piezoelectric polarization is estimated to contribute only about 5-10%.

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Section: Introductionmentioning

confidence: 99%

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

et al. 2010

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“…This is because MBE is, in general, a suitable technique to fabricate monolayer (ML)-controlled abrupt interfaces of AlN/GaN hetero-structures, which is one of the most important requirements for realizing ISBT at short wavelength region. However, the ISBT released by MOVPE showed much weaker and broader peak at around 1.55 mm wavelength compared with that achieved by MBE [12][13][14][15]. We have suggested that this is mainly attributed to the non-abrupt and non-uniform interfaces between wells and barriers due to the inter-diffusion by comparatively higher growth temperature of MQWs in MOVPE than that of MBE.…”

Section: Introductionmentioning

confidence: 47%

“…Furthermore, AlN/GaN MQWs also have merits such as high power handling capabilities and chemical and thermal robustness. Several research groups have reported nearinfrared-range ISBT in AlN/GaN MQWs [6][7][8][9][10][11][12][13][14][15]. Molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) have been mainly adopted to grow AlN/GaN MQWs.…”

Section: Introductionmentioning

confidence: 99%

Intersubband transition at 1.55μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770°C

Yang

Sodabanlu

Sugiyama

et al. 2011

Journal of Crystal Growth

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“…This unique pulsing technique enabled us to achieve high optical and structural quality SLs characterized by atomic force microscopy, scanning electron microscopy, photoluminescence, and X-ray diffraction. 1 After this world's first demonstration of ISB at 1.5 µm 2,3 , we have developed the theory, and came up with a design for ISB absorption at 5.3 μm. Achieving ISB transitions in mid-infrared range required development high quality growth technique specifically designed targeting GaN/AlGaN superlattices.…”

Section: Introductionmentioning

confidence: 99%

“…One period consists of two main deposition phases: (1) AlN deposition, which is realized via pulsing TMAl and NH 3 to enhance aluminum adatom mobility (steps (I) and (II)), and (2) conventional GaN deposition (step (III)), which is realized by conventionally supplying TMGa and NH 3 simultaneously.…”

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confidence: 99%

Development of III-Nitride Based THz Inter-Subband Lasers

Razeghi¹

2009

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. III-Nitrides, due to their large conduction band offset and fast transition speeds, are promising constituents for intersubband (ISB) devices. In addition, III-Nitrides are characterized by a very large phonon energy (90 meV). This makes them ideally suited to the realization of near room temperature operating THz lasers. The objective of this program has been to demonstrate the potential for using III-Nitrides to realize a room temperature operating terahertz intersubband laser. In addition, III-Nitrides are characterized by a very large phonon energy (90 meV). This makes them ideally suited to the realization of near room temperature operating THz lasers. The objective of this program has been to demonstrate the potential for using III-Nitrides to realize a room temperature operating terahertz intersubband laser.As part of this contract, a comprehensive model of intersubband transitions was developed that takes into account the important effects of strain on bandstructure and piezo-as well as spontaneous-electric fields. Interband photoluminescence and intersubband absorption measurements were performed to help develop the modeling. We demonstrated the shortest MOCVD-grown III-Nitride intersubband absorption wavelength of 1.5 ?m as well as the longest intersubband wavelengths of 5.3 ?m, by any growth technique. In addition to investigating the optical properties we fabricated and tested both resonant tunneling diodes and quantum well infrared photodetectors in order to investigate quantum transport in III-Nitrides. Based on the refined III-Nitride intersubband models designs were also developed for room temperature terahertz emission via optical pumping. Electrical injection designs were also proposed for both polar and non-polar growth orientations. "Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and intersubband applications," SPIE

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Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions

Cited by 29 publications

References 21 publications

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

Continuously tunable band gap in GaN/AlN (0001) superlattices via built-in electric field

Intersubband transition at 1.55μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770°C

Development of III-Nitride Based THz Inter-Subband Lasers

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