Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films

Zhao, Yimin; Zhu, Cancan; Wang, Sigen; Tian, Jingze; Yang, Daiqin; Chen, C. K.; Cheng, Hao; Hing, Peter

doi:10.1063/1.1785850

Cited by 98 publications

(71 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For additional comparison, the reported bulk single-and poly-crystalline values for AlN, Al 2 O 3 , and HfO 2 are also included. Focusing first on AlN, one can see that the span of reported thermal conductivities is quite wide with values as high as 320 W/mK being reported for bulk single-crystal AlN 308 and values as low as 1 and 1.7 W/mK being reported for nano-crystalline 309 and amorphous 310 AlN, respectively. For poly-crystalline AlN films deposited primarily by reactive magnetron sputtering, an equally wide range has been reported of 2-210 W/mK where the variation has been strongly correlated to the crystalline quality and grain orientation.…”

Section: 283mentioning

confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

show abstract

Section: 283mentioning

confidence: 99%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The material properties of these components are given in Table 1 [34] b Calculated from Λ = 3 / by considering = 0.168 Wm -1 K -1 from Reference [20] c Reference [35] d Reference [36] e Calculated from Λ = 3 / by considering = 319 Wm -1 K -1 from Reference [36] f Calculated from experimental correlation given in Reference [37] g Calculated from = 3 / Λ by considering = 37 Wm -1 K -1 from Reference [38] h Interpolation from data at pages 625 and 626 from Reference [38] Note that the values in Table 1 have been obtained in the framework of the so-called "dispersion model" [39] where it is admitted that the phonons have different energies and 13 velocities due to their dispersion. In a previous work [40], we have studied the SiO2-epoxy mixture in absence of agglomeration, i.e.…”

Section: Outlinementioning

confidence: 99%

Effect of volume-fraction dependent agglomeration of nanoparticles on the thermal conductivity of nanocomposites: Applications to epoxy resins, filled by SiO2, AlN and MgO nanoparticles

Machrafi

Lebon

Iorio

2016

Composites Science and Technology

View full text Add to dashboard Cite

Abstract.A thermodynamic model for transient heat conduction in ceramic-polymer nanocomposites is proposed. The model takes into account particle's size, particle's volume fraction, and interface characteristics with emphasis on the effect of agglomeration of particles on the effective thermal conductivity of the nanocomposite.The originality of the present work is its basement on extended irreversible thermodynamics, combining nano-and continuum-scales without invoking molecular dynamics. The model is compared to experimental data using the examples of SiO2, AlN and MgO nanoparticles embedded in epoxy resin. The analysis is limited to spherical nanoparticles. The dependence of the degree of agglomeration with respect of the volume fraction of particles is also discussed and a power-law relation is established through a kinetic mechanism and experiments performed in our laboratory. This relation is used in 2 our theoretical model, resulting into a good agreement with experiments. It is shown that the effective thermal conductivity may either increase or decrease with the degree of agglomeration.

show abstract

“…AlN has superior thermal and mechanical properties in the infrared. In particular, the high thermal conductivity of AlN is comparable to metals such as Al and is compared to Al oxide (Zhao et al, 2004) about 10 times higher. This is beneficial regarding the heat transfer efficiency to the energy transducer in an integrated sensor.…”

Section: Materials and Simulation Modelmentioning

confidence: 86%

Enhanced wavelength-selective absorber for thermal detectors based on metamaterials

Shoshi

Maier

Brueckl

2016

J. Sens. Sens. Syst.

View full text Add to dashboard Cite

Abstract. The dissipative electromagnetic energy absorption of tailored metamaterials can be exploited to improve the spectral sensitivity and selectivity of thermal detectors. The desired detector characteristics are engineered by tuning the single-or multiband absorption by resonance frequency, magnitude, and spectral bandwidth, strongly depending on the geometrical design of metamaterials. Here, the optical absorption properties of trilayer and multilayer resonant structures are investigated by numerical simulations. We consider isotropic, i.e., polarization-independent, disk-shaped absorber elements consisting of alternating aluminium and aluminium nitride layers of nanometer thicknesses, thus representing low-mass absorbers. Trilayer absorbers show spectral resonances at wavelengths between 2 and 6 µm, reaching near-unity absorption with peak bandwidths ranging from 0.45 to 1.05 µm. The absorption characteristics remain almost unchanged for radiation with an oblique incidence angle up to 40 • . Resonant structures of multilayer absorber elements show besides spectral broadening a dual-band perfect absorption, which are suitable for simultaneous multispectral infrared imaging.

show abstract

Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films

Cited by 98 publications

References 12 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Effect of volume-fraction dependent agglomeration of nanoparticles on the thermal conductivity of nanocomposites: Applications to epoxy resins, filled by SiO2, AlN and MgO nanoparticles

Enhanced wavelength-selective absorber for thermal detectors based on metamaterials

Contact Info

Product

Resources

About