Pulsed plasma production for applications in plasma immersion ion implantation and its implications

Mukherjee, S. K.; Ranjan, Mukesh; Rane, R.; Vaghela, N.; Phukan, A.; Suraj, K.S.

doi:10.1016/j.surfcoat.2006.09.093

Cited by 10 publications

(3 citation statements)

References 15 publications

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“…At typical HVGD pressure and energy ranges, ion-neutral collisions are significant (whereas at HV electronneutral collisions rapidly decrease) [19,20] and can even be responsible for ionization. Charge exchange will result in low energy ions but energetic neutrals will be implanted instead, without being accounted for in the implantation current, and could result in elemental implantation depths comparable to the ones obtained with ion implantation alone [21].…”

Section: Resultsmentioning

confidence: 99%

Nitrogen plasma ion implantation in silicon using short pulse high voltage glow discharges

Tan

Ueda

Rossi

et al. 2007

J. Phys. D: Appl. Phys.

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A high voltage (HV) pulse generator based on Blumlein technology was used to implant nitrogen ions into silicon substrates by immersion in a plasma generated by the HV pulse itself. Working pressures, applied HVs and treatment times were varied. Elemental depth profiles determined by Auger electron spectroscopy showed deeper penetration for higher voltages and broader profiles for increased treatment times indicating higher diffusion, as expected. Penetration depths, however, were about half of the values calculated by the SRIM code, probably due to the short duration of the HV pulse. The high-resolution x-ray diffraction ω/2θ scans measured around the (0 0 4) Si Bragg reflection of implanted samples had shoulders in the lower ω side, indicating a lattice expansion in the direction normal to the surface. Dynamical diffraction theory of Takagi–Taupin was used to fit the measured spectra, thus finding the strain profiles in the implanted samples. Both maximum strain values and integrated strains increased for samples implanted with higher voltages and treatment times and were almost independent of pressure.

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Section: Resultsmentioning

confidence: 99%

Nitrogen plasma ion implantation in silicon using short pulse high voltage glow discharges

Tan

Ueda

Rossi

et al. 2007

J. Phys. D: Appl. Phys.

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“…The discharge current may reach saturation depending on the applied voltage as well as the pressure of the working gas being ionized by the secondary electrons. [15][16][17]…”

Section: A Hv Glow Dischargementioning

confidence: 99%

Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation

Gong

Tian

Yang

et al. 2008

Review of Scientific Instruments

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A novel power supply system that directly couples pulsed high voltage (HV) pulses and pulsed 13.56 MHz radio frequency (rf) has been developed for plasma processes. In this system, the sample holder is connected to both the rf generator and HV modulator. The coupling circuit in the hybrid system is composed of individual matching units, low pass filters, and voltage clamping units. This ensures the safe operation of the rf system even when the HV is on. The PSPICE software is utilized to optimize the design of circuits. The system can be operated in two modes. The pulsed rf discharge may serve as either the seed plasma source for glow discharge or high-density plasma source for plasma immersion ion implantation (PIII). The pulsed high-voltage glow discharge is induced when a rf pulse with a short duration or a larger time interval between the rf and HV pulses is used. Conventional PIII can also be achieved. Experiments conducted on the new system confirm steady and safe operation.

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“…The study of sheath formation at the boundary of the plasma is of great practical importance. In plasma immersion ion implantation (PIII) (Mändl et al 1997;Sheridan et al 1998;Zeng et al 1999;Qi et al 2000;Bilek 2001;Yukimura 2001;Mukherjee et al 2002;Kwok et al 2003;Lacoste and Pelletier 2003;Masamune and Yukimura 2003;Ma et al 2003;Rauschenbach and Mändl 2003;Tian et al 2004Tian et al , 2005Tian et al , 2009Meige et al 2005;Sakudo et al 2006;Ghomi et al 2007Ghomi et al , 2009Huang et al 2007;Li and Wang 2007;Mukherjee et al 2007;Ghomi and Ghasemkhani 2009;Lejars et al 2010;Li et al 2010Li et al , 2012Zhu et al 2011), a plasmacontaining species to be implanted into a substrate is generated by an external plasma source or by the negative bias applied to the substrate (Conrad et al 1987;Meige et al 2005). After the negative bias is applied, electrons are repelled away from the surface leaving heavy ions forming an ion matrix sheath.…”

Section: Introductionmentioning

confidence: 99%

Numerical analysis of monoenergetic electrons energy effect on dynamic potential profile of plasma sheath

Sharifian

2013

J. Plasma Phys.

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The dynamic behavior of the electric potential distribution of a plasma sheath region in the presence of monoenergetic electrons with two different values of energy, larger (fast electrons) and smaller (slow electrons) than the cathode potential energy, is examined numerically by the finite difference method. Exploring and comparing the plots of numerical computation results shows that the time evolution of the non-monotonic potential distribution heavily depends on the energy of monoenergetic electrons.

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Pulsed plasma production for applications in plasma immersion ion implantation and its implications

Cited by 10 publications

References 15 publications

Nitrogen plasma ion implantation in silicon using short pulse high voltage glow discharges

Nitrogen plasma ion implantation in silicon using short pulse high voltage glow discharges

Direct coupling of pulsed radio frequency and pulsed high power in novel pulsed power system for plasma immersion ion implantation

Numerical analysis of monoenergetic electrons energy effect on dynamic potential profile of plasma sheath

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