Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band

Abstract

DC, small, and large signal results are shown under continuous wave and pulsed conditions for a β-Ga 2 O 3 metal-oxide-semiconductor field-effect transistor operating at 1 and 2 GHz. The device has a maximum transducer gain, maximum output power, and peak power added efficiency of 13 dB (15 dB), 715 mW/mm (487 mW/mm), and 23.4% (21.2%), respectively at 1 GHz (2 GHz). We observe the continuous wave output power is limited to 213 mW/mm by drain dispersion likely from surface or interface traps in the gatedrain region as indicated by pulsed IV measurements. High parasitic resistances, as indicated by high knee voltages, also limit the power performance under continuous and pulsed large signal conditions.

Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit

“…Pulsed I-V measurements show very little current collapse as a result of gate bias alone. The lack of gate oxide and its associated defect traps plays a role, though previously reported β-Ga 2 O 3 MOSFETs also show low gate lag [25], [26]. Drain lag is comparable to previous reports, and even at a quiescent drain bias of 25 V, current collapse at V ds,on = 10 V is under 30% (Fig.…”

Temperature Dependent Current Dispersion Study in $β$-Ga$_2$O$_3$ FETs Using Sub-Microsecond Pulsed IV Characteristics

“…Since it is highly unlikely that as grown MBE substrate had a high concentration of surface traps, reactive ion etching step is responsible for the defect related interface traps observed in this study. A comparison with other published results shows that similar DC-RF dispersion was seen in [44] which used RIE for the channel layer. There has been report of RIE induced channel depletion in Ga 2 O 3 MESFETs [50].…”

“…al. [44] have reported pulsed large signal power performance of β-Ga 2 O 3 MOSFET. They have analyzed continuous and pulsed output power to provide evidence of presence of traps for the observed dispersion.…”

Solar-blind photodetectors prepared using semi-insulating Co:β-Ga2O3 single crystals that are stable over a wide temperature range

“…The resistivity of Co:β-Ga 2 O 3 also reached the level of 10 11 –10 12 Ω cm at RT, but it is worth noting that a wide-temperature and stable resistivity plateau (∼RT–300 °C) could be seen, revealing the favorable possibility of improving the high-temperature performance stability of β-Ga 2 O 3 -related devices. 41,42 Actually, the free electrons of residual shallow donors, e.g. , Si or Sn, will be captured at first by deep-level acceptors Co or Fe, thus making Co:β-Ga 2 O 3 or Fe:β-Ga 2 O 3 appear in the SI state at RT.…”

“…where h is the Planck constant (eVÁ s), A is the coefficient of b-Ga of improving the high-temperature performance stability of b-Ga 2 O 3 -related devices. 41,42 Actually, the free electrons of residual shallow donors, e.g., Si or Sn, will be captured at first by deep-level acceptors Co or Fe, thus making Co:b-Ga 2 O 3 or Fe:b-Ga 2 O 3 appear in the SI state at RT. 26,43 In addition, the Co:b-Ga 2 O 3 and Fe:b-Ga 2 O 3 samples exhibit high resistivities of 10 11 -10 12 O cm at RT, indicating that shallow donors are effectively compensated by the introduced deep-level acceptors.…”