2015 IEEE Pulsed Power Conference (PPC) 2015
DOI: 10.1109/ppc.2015.7296854
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Pulsed power system for the HAPLS Diode Pumped Laser System

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Cited by 7 publications
(5 citation statements)
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“…Therefore, the inductance of L 1 and L 2 are typically designed to range from tens to hundreds of microhenry which leads to inductive storage control difficulties in stage 1 by adopting digital control, such as average current control and peak current control. For example, if the MIEF-PPS total input voltage was set to a value of v in = 50 V with an inductance L = 80 μH, the minimum time required to reach inductor current of I ref = 15 A, is obtained from (1): (12) By using the first-order Taylor series expansion, the inductor current can be approximately expressed as: (13) Using (13), the current rising time would be 24 µs. Thus, the MIEF-PPS would have an inductor charging rate of 0.625 A/µs.…”
Section: A Inductive Storage Controlmentioning
confidence: 99%
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“…Therefore, the inductance of L 1 and L 2 are typically designed to range from tens to hundreds of microhenry which leads to inductive storage control difficulties in stage 1 by adopting digital control, such as average current control and peak current control. For example, if the MIEF-PPS total input voltage was set to a value of v in = 50 V with an inductance L = 80 μH, the minimum time required to reach inductor current of I ref = 15 A, is obtained from (1): (12) By using the first-order Taylor series expansion, the inductor current can be approximately expressed as: (13) Using (13), the current rising time would be 24 µs. Thus, the MIEF-PPS would have an inductor charging rate of 0.625 A/µs.…”
Section: A Inductive Storage Controlmentioning
confidence: 99%
“…In general, semiconductor laser PPS drivers are classified into two types: linear drivers and switched mode drivers. Drivers with linear regulators [12]- [14] have simple structures and a low cost and generate fast enough rising and falling times, as shown in Fig. 1.…”
mentioning
confidence: 99%
“…Pulses are then formatted from round to rectangular, and injected into the power amplifier. The power amplifier consists of two amplifier heads that are pumped by four High-Power Intelligent Laser Diode System jointly developed by LLNL and Lasertel Inc [7]. It provides ~800 kW peak power per diode array in a 300 us pulse width at repetition rate up to 20Hz and in a 5.6 x 13.8 cm 2 beam area.…”
Section: Figure 1: Laser Driven Secondary Sources Provide Fertile Gromentioning
confidence: 99%
“…Equally critical to high average power operation is the removal of heat from the amplifier head. Efficient heat management of both the HAPLS pump laser and main Ti:Sapphire amplifier is enabled by a multi-slab amplifier design cooled by room temperature, high flow speed helium gas [6,7]. Turbulent flow efficiently extracts heat from the extraction surfaces of the laser head, producing a longitudinal thermal gradient to minimize thermally induced wavefront distortion.…”
Section: Figure 1: Laser Driven Secondary Sources Provide Fertile Gromentioning
confidence: 99%
“…QCW diode laser stacks have a wide variety of applications ranging from pumping solid state lasers for industrial and defense applications, to direct diode sources in the cosmetic and medical field [1,2]. Recent advances in the development of solid-state lasers for extreme high peak energy applications such as secondary sources [3] or laser based inertial confinement fusion [4,5] have the potential to significantly increase the demand and quality of such QCW sources. This will drive the requirement for QCW diode laser pump stack manufacturing technologies that not only deliver high reliability and peak power density, but also use designs suitable for high volume low-cost manufacturing.…”
Section: Introductionmentioning
confidence: 99%