Pulsed-Spray Radiofrequency Plasma Enhanced Chemical Vapor Deposition of CuInS2 Thin Films

Abstract

Thin films of CuInS 2 were grown on various substrates at a temperature of 523 K from two metal-organic precursors using radiofrequency plasma enhanced chemical vapor deposition (PECVD). Two precursor molecules, with different solubility properties, were dissolved in appropriate solvents and sprayed into the plasma region in the PECVD chamber. The resulting films were examined for atomic composition, growth rate, crystalline orientation, and uniformity. Films made from each precursor differed in thickness, atomic composition, and crystallinity. The uniformity of the film was fairly good from near the edge to the center of the substrate, and evidence for a chalcopyrite-like structure was found in several samples deposited from one of the precursor molecules.

Synthesis and Characterization of Bimetallic Single‐Source Precursors (Ph3P)2M(µ‐SEt)2E(SEt)2 for MES2 Chalcopyrite Materials (M = Cu, Ag and E = In, Ga, Al)

“…Although the multisource precursor strategies most often employed in the syntheses of these materials can be direct and economical, they offer limited flexibility to modify reaction conditions without jeopardizing the success of the synthesis. The use of I–III bimetallic chalcogenide SSPs to prepare I–III chalcogenide thin films and nanoparticles thus offers the potential for more precise and detailed variations on these materials . Since the initial report of (Ph 3 P) 2 Cu(µ‐SEt) 2 In(SEt) 2 ( 1 ), by Hirpo et al, several groups have reported syntheses of Cu‐In and Ag‐In bimetallic complexes employing similar synthetic strategies, and we have reported on an alternative preparation of the original complex .…”

Temperature‐dependent Raman investigation of CuInS2 with mixed phases of chalcopyrite and CuAu

“…CuInS 2 is also an environmentally friendly semiconductor material, because it does not contain any toxic elements. Several techniques can be employed to grow CuInS 2 thin film, such as physical co‐evaporation 2, sulfurization of CuIn precursor layer in S‐containing atmosphere 3, reactive sputtering 4, chemical vapor deposition 5, and spray pyrolysis 6. The two‐step method, with the first step of growing a CuIn alloy film and the second step of annealing this precursor layer in S‐containing atmosphere, is widely employed to obtain high‐efficiency solar cell.…”

Tetranuclear organometallic complexes based on 1,2-ethanedithiolate ligands as potential precursors for CuMS2 (M = Ga, In)

“…NMR investigations showed that these compounds form an equilibrium between the 3 : 1 : 4 complex and a mixture of the 2 : 2 : 4 complex and the copper complex [( i Pr 3 PCu) 4 (SCH 2 CH 2 S) 2 ] (1). 31 P NMR spectroscopy can be applied to detect complexes…”

“…5. 31 P NMR spectroscopy offers a good possibility to detect at least qualitatively significant amounts of [( i Pr 3 PCu) 3 (MR 2 )(SCH 2 CH 2 S) 2 ] (10-17) as a possible impurity in [( i Pr 3 PCu) 2 (MR 2 ) 2 (SCH 2 CH 2 S) 2 ] (2-9). In a few cases it was observed that minor amounts of the complex with a Cu : M : S ratio of 3 : 1 : 4 crystallized together with the complex with a ratio of 2 : 2 : 4.…”

“…The possibility of using modified chemical vapor deposition techniques for the formation of CIGSSe thin films has been shown. 9,13,31,40 An example of a single source precursor (SSP) is the dinuclear complex [(Ph 3 P) 2 CuIn(SEt) 4 ]. 10 Several studies involve variations of this SSP for the formation of CIGS thin films by an atmospheric pressure spray pyrolysis process.…”