Pulsed techniques for the characterization of low-frequency dispersive effects in RF power FETs using a flexible measurement set-up

Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed

“…The traps are most certainly filled by the dc bias of the transistor, but will also further fill under large-signal RF operation. As the transistor operates along its loadline and swings at high frequency to instantaneous drain voltages larger than the bias voltage, it will cumulatively fill traps, further degrading the performance of the device past the initial trapping and/or selfheating from its dc bias conditions [15], [16]. This effect, first reported in [17] for C-MOSFETs, is referred to as the cyclostationary effect.…”