Pump-probe experiments at 1.54μm on silicon-rich silicon oxide waveguides

Forcales, M.; Smith, Nathanael J.; Elliman, R. G.

doi:10.1063/1.2206871

Cited by 12 publications

(18 citation statements)

References 10 publications

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“…They can rather be attributed to the excitons that are formed by electrons and holes in different Si-nc and thus separated by a large distance [128]. Similar long lifetime behaviors have been observed in ion-implanted samples, and explained in terms of the presence of specific charge traps within Si-nc or damaged nanocrystals [148].…”

Section: Sio2 (Cm 2 )supporting

confidence: 50%

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

162

105

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Silicon photonics is no longer an emerging field of research and technology but a present reality with commercial products available on the market, where low-dimensional silicon (nanosilicon or nano-Si) can play a fundamental role. After a brief history of the field, the optical properties of silicon reduced to nanometric dimensions are introduced. The use of nano-Si, in the form of Si nanocrystals, in the main building blocks of silicon photonics (waveguides, modulators, sources and detectors) is reviewed and discussed. Recent advances of nano-Si devices such as waveguides, optical resonators (linear, rings, and disks) are treated. Emphasis is placed on the visible optical gain properties of nano-Si and to the sensitization effect on Er ions to achieve infrared light amplification. The possibility of electrical injection in light-emitting diodes is presented as well as the recent attempts to exploit nano-Si for solar cells. In addition, nonlinear optical effects that will enable fast all-optical switches are described.

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Section: Sio2 (Cm 2 )supporting

confidence: 50%

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

162

105

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“…In connection to silicon photonics, we should point out that the excited state absorption is substantial including the important 1.55 mm fiber optics communication wavelength. These results provide a more comprehensive picture than the reported experimental measurements [119][120][121] that are usually obtained at a single energy of the probe beam. Finally, it needs to be mentioned that for both intraband and excited state absorptions displayed in Figures 2.14 and 2.15, the high energy parts will be masked by the interband transition whenever it becomes energetically possible.…”

Section: Excited State Absorptioncontrasting

confidence: 49%

“…Recent experiments on excited state absorption concluded that more attention should be devoted to the role of the excitation conditions in the quest for the silicon laser [119][120][121]. For this reason, we consider another intraband absorption process where the system is under a continuous interband optical pumping that creates electrons and holes with excess energy.…”

Section: Excited State Absorptionmentioning

confidence: 99%

Electronic and Optical Properties of Silicon Nanocrystals

Bulutay

Ossicini

2010

Silicon Nanocrystals

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Several strategies have been researched over the last few years for light generation and amplification in silicon. One of the most promising one is based on silicon nanocrystals (Si NCs) with the aim of taking advantage of the reduced dimensionality of the nanocrystalline phase (1-5 nm in size) where quantum confinement, band folding, and surface effects play a crucial role [1,2]. Indeed, it has been found that the Si NC bandgap increases with decrease in size and a photoluminescence (PL) external efficiency in excess of 23% is obtained [3]. Si NC-based LED with high efficiency have been obtained by using Si NC active layers [4] and achieving separate injection of electrons and holes [5]. Moreover, optical gain under optical pumping has been already demonstrated in a large variety of experimental conditions [6][7][8][9][10][11].After the initial impulse given by the pioneering work of Canham on photoluminescence from porous Si [12], nanostructured silicon has received extensive attention. This activity is mainly centered on the possibility of getting relevant optoelectronic properties from nanocrystalline Si. The huge efforts made toward matter manipulation at the nanometer scale have been motivated by the fact that desirable properties can be generated by just changing the system dimension and shape. Investigation of phenomena such as the Stokes shift (difference between absorption and emission energies), the PL emission energy versus nanocrystals size, the doping properties, the radiative lifetimes, the nonlinear optical properties, the quantum-confined Stark effect (QCSE), and so on can give a fundamental contribution to the understanding of how the optical response of such systems can be tuned. A considerable amount of work has been done on excited Si NCs [2, 13-23], but a clear understanding of some aspects is still lacking. The question of surface effects, in particular oxidation, has been addressed in the last few years. Both theoretical calculations and experimental observations have been applied to investigate the possible active role of the interface on the optoelectronic properties of Si NCs. Different models have been proposed: Baierle et al. [24] have considered the role of the surface geometry distortion of small hydrogenated Si clusters in the excited state.

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“…The explanation can be found either to excitons that are formed by electrons and holes separated by a large distance [6] or to the carrier trap associated with nanoclusters, as recently found by Forcales et al [34].…”

Section: B Pump and Probe Measurementsmentioning

confidence: 82%

Er-Coupled Si Nanocluster Waveguide

Daldosso

Navarro-Urriós

Melchiorri

et al. 2006

IEEE J. Select. Topics Quantum Electron.

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Abstract-Rib-loaded waveguides containing Er3+ -coupled Si nanoclusters (Si-nc) have been produced to observe optical gain at 1535 nm. The presence of Si-nc strongly improves the efficiency of Er 3+ excitation but may introduce optical loss mechanisms, such as Mie scattering and confined carrier absorption. Losses strongly affect the possibility of obtaining positive optical gain. Si-nc-related losses have been minimized to 1 dB/cm by lowering the annealing time of the Er 3+ -doped silicon-rich oxide deposited by reactive magnetron cosputtering. Photoluminescence (PL) and lifetime measurements show that all Er 3+ ions are optically active while those that can be excited at high pump rates via Si-nc are only a small percentage. Er 3+ absorption cross section is found comparable to that of Er 3+ in SiO 2 . However, dependence on the effective refractive index has been found. In pump-probe measurements, it is shown how the detrimental role of confined carrier absorption can be attenuated by reducing the annealing time. A maximum signal enhancement of about 1.34 at 1535 nm was measured.

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Pump-probe experiments at 1.54μm on silicon-rich silicon oxide waveguides

Cited by 12 publications

References 10 publications

Nanosilicon photonics

Nanosilicon photonics

Electronic and Optical Properties of Silicon Nanocrystals

Er-Coupled Si Nanocluster Waveguide

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