2007
DOI: 10.1103/physrevlett.99.223603
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Purcell Enhancement of Spontaneous Emission from Quantum Cascades inside Mirror-Grating Metal Cavities at THz Frequencies

Abstract: Quantum cascade devices processed into double metal cavities with subwavelength thickness and a grating on top are studied at terahertz frequencies. The power extracted from the devices as a function of the device thickness and the grating period is analyzed owing to electrodynamical modeling of dipole emission based on a modal method in multilayer systems. The experimental data thus reveal a strong Purcell enhancement, with Purcell factors up to approximately 50.

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Cited by 37 publications
(34 citation statements)
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“…This estimate agrees with the experimental results of Ref. 8. The generation of terahertz emission by a microcavity in the polariton lasing regime is conveniently described by a system of kinetic equations for the upper and lower polariton states and the terahertz mode.…”
supporting
confidence: 89%
“…This estimate agrees with the experimental results of Ref. 8. The generation of terahertz emission by a microcavity in the polariton lasing regime is conveniently described by a system of kinetic equations for the upper and lower polariton states and the terahertz mode.…”
supporting
confidence: 89%
“…3 density of states has a sharp peak around the eigenfrequency of THz cavity and the rate of spontaneous emission is dramatically increased due to the Purcell effect [31]. Current state of technology allows the increasing of the emission rates in the THz regime by a factor of 100 in high-quality cavities [32]. The results of the calculation of the spectrum based on using the quantum regression theorem are presented in Fig.…”
Section: Discussionmentioning
confidence: 99%
“…This behaviour is consistent with the system operating in the weak coupling regime, with the observed enhancement of the spontaneous emission occurring through the Purcell effect. 3,4 This is further systematically revealed in Figure 2(a), which shows the I-V characteristics and measured optical power for the same active region as s is varied from 8 lm to 12 lm. The decrease in optical power for bias voltage above 1.3 V is attributed to a decoupling of the injection state with the upper state of the radiative transition, confirmed by band structure simulations (not shown).These data are summarized in Figure 2 2 All the following results of our study are performed with samples at resonance (s ¼ 11 lm) in order to be in the Purcell regime.…”
mentioning
confidence: 56%
“…A similar fitting protocol in the case of THz electroluminescence has been used in Ref. 4. Figure 3(b) summarizes the values of B compared to the reference mesa on a linear scale for various arrays fabricated for this study, as a function of the Purcell factor F p , which is explained below (Eq.…”
mentioning
confidence: 98%
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