This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 μm GaAs metamorphic high electron-mobility transistors (MHEMTs). The devices with a 0.12 μm gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak g m of 660 mS/mm, an f T of 170 GHz, and an f MAX of more than 300 GHz. By combining two sub-oscillators having 6 × 50 μm peripheries MHEMT, the push-push oscillator achieved 5.8 dBm of output power at 59.9 GHz with good fundamental suppression. This is the first monolithic push-push oscillator in 60 GHz band fabricated using MHEMT technology, and demonstrates a potential of MHEMT for cost effective millimeter wave commercial applications.Index Terms -Push-push oscillator, metamorphic, high electron-mobility transistor(HEMT), millimeterwave circuit.