Pushing the limits of EUV mask repair: addressing sub-10 nm defects with the next generation e-beam-based mask repair tool

Abstract

Mask repair is an essential step in the manufacturing process of extreme ultraviolet (EUV) masks. Its key challenge is to continuously improve resolution and control to enable the repair of the ever-shrinking feature sizes on mask along the EUV roadmap. The state-of-the-art mask repair method is gas-assisted electron-beam (e-beam) lithography also referred to as focused electron-beam induced processing (FEBIP). We discuss the principles of the FEBIP repair process, along with the criteria to evaluate the repairs, and identify the major contributions determining the achievable resolution. As key results, we present several high-end repairs on EUV masks including a sub-10-nm extrusion achieved with the latest generation of e-beambased mask repair tools, the MeRiT ® LE. Furthermore, we demonstrate the corresponding repair verification using at-wavelength (actinic) measurements. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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