PVD of copper sulfide (Cu₂S) for PIN-structured solar cells

Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb2Se3/ZnS Heterointerfaces

“…At this thickness, the Sb 3d 5/2 signal originates directly from the interface region, so that effects of a potential interface reaction appear more pronounced than for thinner ZnS film thicknesses. Similar observations have been made for other sputter deposited semiconductor heterointerfaces in the literature . To account for the asymmetry of the peak and for a more accurate determination of the Sb 3d 5/2 CL BE two Voigt profiles were fitted for these deposition steps.…”

“…While the theoretical prediction of band alignments at semiconductor heterointerfaces is often not feasible, X‐ray and ultraviolet photoelectron spectroscopy (XPS/UPS)‐based measurements can directly track evolution of the valence band at an interface . A commonly used procedure to determine band alignments of ex situ prepared interfaces are XPS/UPS measurements combined with ion sputter depth profiling of the junction.…”

Copper (I) Oxide (Cu2O) based back contact for p‐i‐n CdTe solar cells

“…The drawback of ZnTe is the fact that this contact will only work with an additional doping with copper either with a copper layer or copper incorporated in the ZnTe. Another possible p‐type contact material to form a p‐i‐n structure is Cu 2 O . Using the transitivity rules for band alignments the CdTe/Cu 2 O interface should show no valence band offset and a barrier of approximately 0.6 eV for electrons in the conduction band .…”

“…The drawback of ZnTe is the fact that this contact will only work with an additional doping with copper either with a copper layer or copper incorporated in the ZnTe. Another possible p-type contact material to form a p-i-n structure is Cu 2 O [17].…”

Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires

“…1 suggesting the formation of a p-n junction between the n-type Sn:In 2 O 3 NWs and the p-type Cu 2 S. Similarly, a rectifying I-V characteristic was obtained from the Cu 2 S/SnO 2 p-n junction also shown in Fig. 1 38,39 In addition, we have taken into account (a) the work function of Cu 2 S, i.e., φ = 5.1 eV 40 and its electron affinity χ = 1.9 eV 41,42 and (b) the CB discontinuity ∆E c ≈ 0.1 eV at the SnO 2 /Cu 2 S and Sn:In 2 O 3 /Cu 2 S heterojunctions similar to that between ZnO and Cu 2 S 43 but also in accord with Säuberlich and Klein 44 who showed that the large interface dipole moments which exist between ZnO, SnO 2 , In 2 O 3 , and Cu 2 S result into small ∆E C .…”