PVT growth of GaN bulk crystals

Siche, D.; Gogova, D.; Lehmann, Sebastian; Fizia, T.; Fornari, R.; Andrasch, Mathias; Pipa, A. V.; Ehlbeck, Jörg

doi:10.1016/j.jcrysgro.2010.10.030

Cited by 13 publications

(7 citation statements)

References 14 publications

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“…A high rate of reactive nitrogen formation j N > 4 × 10 15 cm −2 s −1 is necessary for growth rates higher than 10 µm/h 7. Therefore, stable plasma source operation is the prerequisite for long duration growth experiments, being at the same time the most challenging task.…”

Section: Methodsmentioning

confidence: 99%

“…Plasma‐assisted synthesis of GaN has thus drawn attention of the scientific community. Replacing ammonia by nitrogen plasma as a source of reactive nitrogen presents numerous advantages, such as eliminating the poisonous and aggressive gas from the reaction chamber 7. Although plasma enhanced methods have been successful in growing thin film GaN, they were unable to meet the growing demand for GaN substrates until now.…”

Section: Introductionmentioning

confidence: 99%

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Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Zwierz

Golka

Kachel

et al. 2013

Cryst. Res. Technol.

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We present an alternative approach to grow thick GaN single crystalline layers from Ga vapour, transported by an N 2 carrier gas flow, and from nitrogen, excited very near the substrate by 2.45 GHz microwaves at pressure in the 200-800 mbar range. Crystal growth requires high stability of process parameters, especially of plasma operation. A major challenge arose from temperature dependent changes in cavity resonance. Optical emission spectroscopy (OES) was used for plasma characterization while the grown layers were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Zwierz

Golka

Kachel

et al. 2013

Cryst. Res. Technol.

Self Cite

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“…In contrast to gallium melt, GaN powder reveals an incongruent evaporation, which leads to an unstable growth rate . Therefore, some working groups introduced a larger distance of several centimeters between the gallium source and the substrate and separated the gallium melt from the ammonia flow . The results of Siche et al revealed a significant process contamination due to high temperatures of reactor parts and a formation of polycrystalline GaN at high temperature gradients between gallium melt and the substrate.…”

Section: Introductionmentioning

confidence: 99%

Modified high temperature vapor phase epitaxy for growth of GaN films

Lukin

Schneider

Barchuk

et al. 2017

Phys. Status Solidi A

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The high temperature vapor phase epitaxy (HTVPE) uses ammonia and thermally evaporated, elemental gallium as precursors for the growth of GaN films. This paper investigates the HTVPE using numerical modeling of the gallium vapor transport and systematical growth experiments. The presented growth setup allows a flexible control of the growth process and variation of growth parameters in a wide range. Based on simulation results, the impact of the gallium melt temperature, the gas flow in the reactor and the reactor pressure on the gallium vapor transport is studied in detail. Experimental growth rates as function of the reactor pressure and the melt temperature are compared with the numerical simulation. The influence of hydrogen in the carrier gas on the properties of the HTVPE GaN layers is discussed.

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“…The growth of thicker layers by this process, which can be considered as bulk crystals, poses considerable problems, e.g., NH 4 Cl byproduct formation as limitation for the HVPE process duration. For this reason, alternative growth techniques, i.e., high pressure solution growth, flux growth, ammonothermal growth, and plasma-enhanced approaches from solution, melt, and vapor, were explored. To find an optimal one is a goal of ongoing research. − …”

Section: Introductionmentioning

confidence: 99%

Gas-Phase Reactions Regarding GaN Crystal Growth in a Carbon-Based Transport System: A Quantum Chemical Study

Gadzhiev

Сенников

Петров

et al. 2013

Crystal Growth & Design

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To elucidate an experimentally observed increase of GaN crystal growth rate in the Ga(l)-graphite-NH3(g) system (Jacobs, K. et al. J. Cryst. Growth 2010, 312, 750–755), a gas-phase chemical model of the chemical vapor deposition (CVD) process was developed in a quantum chemical study. The reaction mechanisms in a gas-phase Ga/HCN/NH3 system were predicted using density functional theory (DFT) and post-Hartree–Fock methods including conventional DFT (B3LYP/cc-pVTZ) and coupled cluster (CCSD/cc-pVTZ) theory levels. Activation and reaction energies were refined with a CCSD(T)/aug-cc-pVTZ//B3LYP/cc-pVTZ composite approach. A relatively modern variant of the coupled cluster theory (ROCCL method) in conjunction with the aug-cc-pVDZ basis set for H, N, and aug-cc-pV(D+d)Z for Ga atoms) was employed to investigate bond cleavage reaction pathways. Reactions in Ga(2P) + NH3 and Ga(2P) + HCN gas-phase systems and reactivity of products of the Ga(2P) + HCN reaction (HGaCN and HGaNC) with both Ga (atomic vapor) and NH3 (reactive diluent gas) were included in the model of the chemical transport. Elementary steps involving newly reported cyclic (HGaCNGa) containing intermediates were considered. The role of HCN as a chemical transport reagent in GaN CVD was established unambiguously. A comparative study of minimum energy pathways (MEPs) for reactions in the Ga/NH3 and Ga/HCN/NH3 systems supported the experimental observation of the GaN deposition rate increase.

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PVT growth of GaN bulk crystals

Cited by 13 publications

References 14 publications

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Modified high temperature vapor phase epitaxy for growth of GaN films

Gas-Phase Reactions Regarding GaN Crystal Growth in a Carbon-Based Transport System: A Quantum Chemical Study

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